AS6C6264-55PCN

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	64Kb (8K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Through Hole
Package / Case:	28-DIP (0.600", 15.24mm)
Supplier Device Package:	28-PDIP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS6C6264-55PCN Memory Application Field and Working Principle

Memory plays an indispensable role in our efficient information processing system, with steadily growing memory capacity in recent years. AS6C6264-55PCN memory, as a kind of static random access memories(SRAMs) for both commercial and industrial field applications, is a significant part of the advancement in the respective area. This paper mainly focuses on providing an in-depth analysis on the application field and working principle of AS6C6264-55PCN memory.The commercial applications of AS6C6264-55PCN include high activity video game consoles, automotive VMS, and smart TV OS. On the other hand, the industrial area covers wireless router, industrial control system and aerospace system. As for a typical automotive VMS application, the AS6C6264-55PCN contributes to providing adequate space for short and long term memory as well as data integrities and machine/driver integrated control. With over 10 million hours MTBF, it grants an easy-to-use trustworthy and high-performance environment that suits the specific need.When the power is applied to the AS6C6264-55PCN, a process composed of four key steps happens. Firstly, the internal logic circuit will be triggered to form the operation cycle and command code determination. Subsequently, the high speed CMOS logic circuit and address decode drivers will be able to locate the bits in query. Following that, the compare and selecting process is conducted, in which the appropriate combination of transistors and bits are conductive to enable reading or writing into the memory cell. Lastly, the output buffer magnifies the read data for output to the external circuits.What sets AS6C6264-55PCN apart is its combination of high-speed operation and fully static circuitry, providing well-organized self-timed logic functions and output control. This feature allows each level of cells to be tuned to cover wide temperature range, shorter cycle time and minimized power consumption. As a result, those extraordinary features make the AS6C6264-55PCN memory an ideal choice for many specific applications.More specifically, it enables double centered data access, which is necessary for many commercial projects as well as industrial ones. For instance, when designing a Wi-Fi router application, the AS6C6264-55PCN can guarantee precise control and higher throughput significantly. Moreover, the operating frequency of this memory is as fast as 75MHz, which enables data transmission speed up to 1 Gbps. In conclusion, It is not an exaggeration to say that AS6C6264-55PCN memory makes a huge contribution to the advancement of memory technology, especially in the SRAMs industry. It provides wide temperature range, higher throughput and minimized power consumption that suits both commercial and industrial needs. In addition, the double centered data access contributes to a dependable high-speed operation in many applications such as Wi-Fi router, automotive VMS and high activity video game consoles. Those great features of the AS6C6264-55PCN memory will continue to give huge support for various industries.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description