AS6C62256A-70PCN Allicdata Electronics
Allicdata Part #:

1450-1182-5-ND

Manufacturer Part#:

AS6C62256A-70PCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 256K PARALLEL 28DIP
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: AS6C62256A-70PCN datasheetAS6C62256A-70PCN Datasheet/PDF
Quantity: 748
Stock 748Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP
Description

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Memory is an important storage device used in most computer systems. An important type of memory device is the AS6C62256A-70PCN which is a low-power and high-performance FRAM (Ferroelectric Random Access Memory) device from the AS6C62256A family. This article will take a closer look at the application field and working principle of the AS6C62256A-70PCN.

The AS6C62256A-70PCN memory device is suitable for a broad range of applications, including automotive infotainment, instrumentation and control, home, gaming and industrial applications. Its robust design combines the advantages of DRAM and SRAM which make it ideal for near-instantaneous data storage under demanding conditions. The device is available in multiple package options and its low-power, non-volatile and high speed characteristics make it an excellent solution for real-time data logging applications.

The AS6C62256A-70PCN memory device also offers significant advantages over traditional memories like SRAM and DRAM. The device comprises a ferroelectric layer which stores electrical signals permanently across multiple layers via electrical polarization. This allows the memory device to be both non-volatile and low-power, enabling the device to store data even when the power is turned off. Moreover, the fast data retrieval is enabled due to the device’s deterministic FRAM access time which is up to ten times shorter than other memory types.

The AS6C62256A-70PCN’s working principle is based on the fact that its ferroelectric layer can store an electrical charge for an indefinite period of time. The data is accessed by an array of capacitors which are connected to each bit location. When a voltage is applied to one of the capacitors, a current passes through that location, the ferroelectric layer, and out the other capacitor, which stores the data in the ferroelectric layer.

The AS6C62256A-70PCN’s robust design and low-power consumption makes it an ideal solution for embedded applications that require low power and high performance. The device’s small form factor and reliable data storage capabilities make it an ideal choice for applications that require persistent data storage. Furthermore, its fast data retrieval time enables the device to provide near-instantaneous data storage in critical situations.

In conclusion, the AS6C62256A-70PCN is an excellent memory device that offers a wide range of applications. The device’s non-volatile, low-power and high-speed design make it an ideal solution for embedded applications that require fast data retrieval and reliable data storage. With its many advantages, the AS6C62256A-70PCN is an ideal choice for developers looking for a reliable and low-power memory device for their applications.

The specific data is subject to PDF, and the above content is for reference

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