Allicdata Part #: | 1450-1041-ND |
Manufacturer Part#: |
AS6C8016-55ZIN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC SRAM 8M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 8Mb (512K x 16) Para... |
DataSheet: | AS6C8016-55ZIN Datasheet/PDF |
Quantity: | 3264 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 8Mb (512K x 16) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
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The application field and working principle of AS6C8016-55ZIN is mainly used in device memory. This type of integrated circuit is created using CMOS Technology. It allows device users to store data and use it in the future.
The AS6C8016-55ZIN is a 16Kbit CMOS memory, consisting of 4Kbyte memory space. By using advanced circuit design, the device works reliable, fast and low-power consumption. It’s is perfect for many real-time applications such as data acquisition, tracking systems and industrial automation systems. It allows for high speed programming with fast read-and-write operations.
The design of AS6C8016-55ZIN supports a number of bus-transaction protocols such as memory mapped I/O, page-mode operations, burst (burst-mode access) and dedicated programming cycles. Furthermore, the device also provides protection from unintentional write operations, write cycles and power-on reset.
The AS6C8016-55ZIN is a synchronous design-which dedicates the memory’s cycle time to the application that needs to execute. The integrated circuit contains an advanced low-power circuit which ensures the system will remain active while consuming only minimum power.
In addition to the standard read-write operations, the AS6C8016-55ZIN supports an erase-program-verify cycle which provides secure verification of the information stored in the memory. It also includes advanced protection register which ensures data security even when multiple memory devices are connected together.
Moreover, the integrated circuit has a built-in low power mode which allows it to enter into standby operation mode when the system is idle. This feature greatly reduces the overall power consumption of the device.
Finally, the AS6C8016-55ZIN also offers advanced features such as self-timing circuits, clock-stretching, glitch detection, refresh back-off, dual-port memory synchronization, and a watchdog timer for improved system performance, reliability and data integrity.
The AS6C8016-55ZIN is the perfect solution for device memory applications which need to operate reliably, while consuming minimal power. It provides high speed performance, reliable write cycles, and provide secure data protection.
The specific data is subject to PDF, and the above content is for reference
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AS6C4016A-45BIN | Alliance Mem... | -- | 5650 | IC SRAM 4M PARALLEL 48VFB... |
AS6C4008-55TIN | Alliance Mem... | -- | 644 | IC SRAM 4M PARALLEL 32TSO... |
AS6C8008-55BIN | Alliance Mem... | -- | 851 | IC SRAM 8M PARALLEL 48TFB... |
AS6C6416-55BIN | Alliance Mem... | 19.75 $ | 198 | IC SRAM 64M PARALLEL 48TF... |
AS6C8016A-55BIN | Alliance Mem... | -- | 258 | IC SRAM 8M PARALLEL 48FPB... |
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AS6C62256-55STCNTR | Alliance Mem... | 1.09 $ | 1000 | IC SRAM 256K PARALLEL 28S... |
AS6C62256-55STINTR | Alliance Mem... | 1.09 $ | 1000 | IC SRAM 256K PARALLEL 28S... |
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