AS6C6416-55BIN Allicdata Electronics
Allicdata Part #:

1450-1465-ND

Manufacturer Part#:

AS6C6416-55BIN

Price: $ 19.75
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 64M PARALLEL 48TFBGA
More Detail: SRAM Memory IC 64Mb (4M x 16) Parallel 55ns 48-TF...
DataSheet: AS6C6416-55BIN datasheetAS6C6416-55BIN Datasheet/PDF
Quantity: 198
1 +: $ 17.94870
10 +: $ 16.87450
25 +: $ 16.29480
50 +: $ 15.77720
220 +: $ 13.88270
440 +: $ 13.51000
Stock 198Can Ship Immediately
$ 19.75
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (8x10)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS6C6416-55BIN is a 16-megabit low-density Flash memory used in a wide range of applications. This versatile memory offers a number of enhanced features such as fast data access, multiple technologies, robust security, and a wide range of applications. The memory exhibits good power management, low power consumption, low voltage operation, and low maintenance costs. It also offers error correction for data retention in case of power outages or inadvertent programming changes.

The AS6C6416-55BIN is typically integrated into electronic devices such as computers, mobile phones, tablets, and wearable device. It is the most versatile memory used in the computing industry and is used in a range of applications. This includes embedded ASICs, firmware updates, booting systems, user interface controls, and embedded applications.

The AS6C6416-55BIN uses a conventional Static Random Access Memory (SRAM) architecture for its operations. The architecture consists of an array of SRAM cells arranged in a square array. Each SRAM cell contains two MOSFETs and a data latch. When the cell is in the active state, the two MOSFETs form a charge-coupled device, which is the basis for the memory cells operation. Each cell can store either a 0 or a 1, which represents the state of the cell before and after the latch is properly programmed.

The SRAM cells act as an addressable memory, which can be accessed simultaneously by multiple processors. It also provides a storage mechanism for data and instructions, which are simultaneously accessed by the processor when executing a specific instruction. The cells, when accessed, can be loaded with data and instructions which can be either read or written. The AS6C6416-55BIN provides an error-correcting code (ECC) to ensure that the stored data is accurate and reliable.

The AS6C6416-55BIN also supports an enhanced security feature, which provides authentication for authentication data and other related signaling. This feature is useful for authenticating devices, files, and other data that is stored in the memory. The security feature also prevents unauthorized access of the data, which helps in safeguarding the information stored in the memory. Finally, the AS6C6416-55BIN supports multiple technologies such asJTAG, SD Slot, PS/2, etc.

In conclusion, the AS6C6416-55BIN is a versatile Flash memory that provides multiple features and technologies such as fast data access, low-power consumption and robust security. Its ARC-based architecture provides a storage mechanism for data and instructions which can be read and written to simultaneously by multiple processors. The enhanced security feature helps in authenticating devices, files and other data stored in the memory, which helps in safeguarding the information. Finally, the multiple technologies such asJTAG, SD Slot, PS/2, etc. make this memory an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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