AUIRF1010EZS

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AUIRF1010EZS power MOSFETs offer outstanding benefits including low gate charge and low offstate resistance. This single device provides a broad range of application capabilities, making it suitable for a wide variety of switching and linear amplifier circuit topologies.

AUIRF1010EZS is a N-Channel enhancement mode MOSFET. It has an avalanche current capability of up to 17 A and can be used in a wide variety of applications. It is capable of handling voltages up to 100V and is also suitable for use in low current applications.

The main purpose of using a MOSFET is to control the current flow for a given voltage. MOSFETs are sensitive to changes in input voltage, so the power handling capability depends on the voltage drive and the resulting current flow through the device. This current flow is determined by the on-state resistance of the device, which is a function of the device voltage and the gate voltage. The on-state resistance of the AUIRF1010EZS is typically 3.80mΩ and the gate threshold voltage is -3.3V.

MOSFETs are designed in such a way that when a voltage is applied to the gate of the MOSFET, a current flows between the source and drain, allowing the MOSFET to act as an electronic switch. The operation of the switch depends on whether the voltage applied to the gate is positive or negative. If the voltage applied to the gate is positive, then the MOSFET will be “on” and the source and drain will be in the same state. If the voltage applied to the gate is negative, then the MOSFET will be “off” and the source and drain will be in different states. By controlling the gate voltage, it is possible to control the current flow through the device.

The AUIRF1010EZS is also well-suited for use in linear amplifiers. It can be used to increase the gain of a system by increasing the current flow through it. By connecting the power leads of the device to the supply, the output current can be increased and the gain of the system can be increased. The AUIRF1010EZS is typically used in voltage amplifier circuits, where the device can be used to amplify a small voltage signal to a larger voltage signal.

The AUIRF1010EZS is a popular choice for many applications due to its low gate charge, low offstate resistance, and high gain properties. It is an ideal device for a variety of switching and linear amplifier topologies. Its wide range of voltages and currents make it suitable for a variety of applications, from high-power switching to low current linear amplification.

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