AUIRF1324WL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Wide Leads
Supplier Device Package:	TO-262-3 Wide
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7630pF @ 19V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	180nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	1.3 mOhm @ 195A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	240A (Tc)
Drain to Source Voltage (Vdss):	24V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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AUIRF1324WL is a type of Field Effect Transistor (FET). It is specifically a Metal-Oxide Semiconductor FET, or MOSFET. It belongs to the category of single FETs, which means that it has a single gate and source. This type of FET can be used in a variety of applications, from relatively low-power devices to high-power devices.The distinguishing factor of the AUIRF1324WL is its use of a unique type of gate insulation. Instead of the commonly used gate materials, such as Poly-Si, the AUIRF1324WL uses a unique type of dielectric material, called High-κ. This material is highly resistant to current leakage, and can operate at higher frequencies than traditional gate materials. This makes it ideal for use in high-speed applications.The device is also suitable for a range of power applications. It can be used in applications that require moderate levels of power handling, such as motor controls, or in high-power applications such as switching power supplies. The power ratings of the device are identified by its current-handling capabilities.The working principle of the AUIRF1324WL is quite simple. When a voltage is applied to the gate, the device turns on, meaning that current can pass from the source to the drain. The device is able to provide this conduction by controlling the amount of current flowing from the source to the drain. This is done by adjusting the voltage applied to the gate, thus changing the conductance of the device.The AUIRF1324WL is also designed to provide fast switching speeds. By using the high-κ dielectric material, the device can switch on and off quickly, allowing for fast switching in applications requiring higher switching speeds.The AUIRF1324WL is a popular choice for a wide range of applications, including low-power and high-power devices, as well as high-speed applications. It offers the combination of fast switching and high power-handling capability, while still maintaining its low-power characteristics. In addition, its use of the high-κ dielectric material allows for better control of current leakage and more reliable operation. Thus, the AUIRF1324WL is an ideal choice for a variety of applications.

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