Allicdata Part #: | AUIRF1404-ND |
Manufacturer Part#: |
AUIRF1404 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 202A TO-220AB |
More Detail: | N-Channel 40V 160A (Tc) 333W (Tc) Through Hole TO-... |
DataSheet: | AUIRF1404 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 333W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5669pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 196nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 121A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRF1404 field effect transistor, more commonly known as the FET, is one of the most widely used types of transistor in the world today. While FETs were first developed in the 1950s, it has only been recently that the 10A FET has come on the scene. The AUIRF1404 is part of this new generation of FETs and is designed to provide unprecedented power handling capabilities for both analog and digital applications. In this article, we\'ll take a look at the application field and working principle of the AUIRF1404.
The AUIRF1404 has a broad application field. It can be used for a wide variety of applications, including power supply circuits, audio amplifiers, switching power supplies and motor controls. It is also used in a wide variety of computer applications, such as high-speed logic circuits and integrated circuits, as well as in communications systems. The main purpose of the AUIRF1404 is to control the current flow in complex power circuits.
The AUIRF1404 is also used in other applications such as sensor and interface circuits. The main advantage of using a FET is that it can be operated at lower voltages than resistors, which can reduce the risk of damage to the circuit. In addition, it can be used to amplify signals and control the speed of switching.
The AUIRF1404 has a distinct working principle. It uses a gate-source-drain structure, in which the gate is the control terminal of the transistor, the source is the positive voltage, and the drain is the negative voltage. The gate, source, and drain terminals are physically connected by a gate oxide layer. When positive voltage is applied to the gate, the oxide layer between the gate and the source opens, thus allowing current flow between the two terminals. When the voltage applied to the gate is increased, the oxide layer is compressed and the current in the transistor decreases.
Another important aspect of the AUIRF1404 is its threshold voltage. This is the voltage that needs to be applied to the gate before the transistor begins to conduct current. Generally speaking, the higher the threshold voltage, the more difficult it is to control the transistor\'s current flow. However, the AUIRF1404 features a low threshold voltage, making it easier to control.
The AUIRF1404 is also characterized by its low on-resistance, which is the resistance between the source and drain when the transistor is conducting. This means that the device can deliver high current with low power consumption. It can also achieve high switching speeds, thanks to its low gate charge.
Overall, the AUIRF1404 is an excellent choice for many applications. Its broad application field, low on-resistance, and low threshold voltage make it an ideal choice for applications that require precise current control. Additionally, its low gate charge and high switching speeds make it ideal for high-speed circuits.
The specific data is subject to PDF, and the above content is for reference
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