Allicdata Part #: | AUIRF1404S-ND |
Manufacturer Part#: |
AUIRF1404S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 202A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 3.8W (Ta), 200W (Tc) Surfac... |
DataSheet: | AUIRF1404S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF1404S is a surface mount N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high power applications. It is a tool for switching large currents and voltages in order to distribute energy efficiently. It is typically used in high power applications such as automotive, welding and power audio amplifiers, as well as power load management, it can be applied in any application requiring a fast-switching device for high frequency pulse width modulation.
This particular model has a drain-source voltage rating of 60 volts, with a continuous drain current on-state of 12.5A. Additionally, it has a maximum power dissipation rating of 1.5W and an input capacitance rating of 240pF. It is easy to use, offering short body and low on-resistance to reduce conduction losses and save power. Moreover, this device can be operated at frequencies up to 50MHz.
The AUIRF1404S works by allowing a fixed amount of current to pass through the device when an electric field is applied. This electric field is proportional to the voltage between the gate and source electrodes. The device has two terminals: a gate, which receives a rational input voltage, and a source, which is connected to the load and works as the output port. When the gate voltage is applied and exceeds the threshold value, more current will flow from source to the load. This is known as the "on" state, when the MOSFET is operating in its highest efficiency and the output voltage at the drain is the same as the input voltage at the gate.
A major advantage of the AUIRF1404S is that it can be switched on extremely quickly with the aid of a low-voltage pulse applied to the gate terminal. This is made possible due to the low gate threshold voltage of the AUIRF1404S which works as a minute resistor, controlling the flow of electric current and enabling voltage control using only a small gate voltage. Additionally, this device also offers a high input impedance and low output leakage for improved noise immunity, higher switching speed and reduced power consumption.
The AUIRF1404S is a versatile device, it can be used for a variety of applications, such as, high power switching devices for power management, electronic lamps, DC motor control, security systems, low voltage, high-speed driver and more. It is important to note that the AUIRF1404S is a sensitive device and must always be operated within the specified parameters.
In conclusion, the AUIRF1404S is an excellent choice for high current, low-voltage and high-frequency applications, which require fast switching and low power dissipation. Its unique properties make it suitable for a variety of applications such as power management, motor control, DC lamp control and more. Its low gate threshold voltage and short body construction offer improved efficiency and faster switching speeds. Moreover, its high input impedance and low output leakage provide improved noise immunity and power savings. Finally, it is important to keep in mind that this device is highly sensitive and should be operated within its specified parameters for optimum performance.
The specific data is subject to PDF, and the above content is for reference
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