AUIRF1404ZL

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The AUIRF1404ZL is a high power, single N-channel, insulated gate field effect transistor (IGFET) also commonly known as a MOSFET. The extrinsic series resistance of this MOSFET is low. This allows for higher power output levels for stabilized radio frequency (RF) applications. The AUIRF1404ZL has a breakdown voltage range from 12V to 30V and is capable of controlling currents of up to 6A.

Application Field

The unique design and high power levels of the AUIRF1404ZL make it ideal for a variety of RF applications. This MOSFET can be used to build amplifiers and synthesizers associated with wi-fi, GSM, and any other type of wireless communication technology. The common drain configuration also makes it useful for low and medium voltage, high current applications involving e-mobility and renewable energy conversion.

The AUIRF1404ZL can also be used to build high-voltage power supplies. The higher current control capabilities allow these power supplies to deliver greater output power and operating efficiency. Since there is less thermal drift and greater energy efficiency, this makes it one of the best choices for other power related applications such as solar inverters and electric vehicles.

Working Principle

The main component of the AUIRF1404ZL is an N-channel insulated gate field effect transistor (IGFET). The IGFET is an electronic component which consists of an active metal oxide semiconductor and an insulated metal fan-out, integrated onto one substrate. An IGFT behaves like an electronic switch, able to switch current, or voltage, in or out as directed.

The insulated metal fan-out is also known as a gate terminal, which is located between two electrodes, a source and a drain. The state of the IGFT is determined by controlling the electrons through the gate terminal. When the gate terminal is not properly charged, no electrons will be able to move from the source to the drain. When the gate terminal is positively charged, the electrons from the source will be allowed to move to the drain, thus turning on the IGFT.

The N-channel feature of the AUIRF1404ZL MOSFET is also important for its performance. An N-channel IGFT works by allowing electrons to move from the drain to the source. The IGFT is turned on when a negative voltage is applied to the gate terminal, allowing the electrons to move from the drain to the source. This in turn allows current to flow.

The AUIRF1404ZL MOSFET ist reliable and efficient in terms of power handling capabilities and circuit operation. It also has a low total harmonic distortion and is suitable for wide input voltage ranges. With its high current control and sturdiness, the AUIRF1404ZL is arguably one of the most versatile and reliable MOSFETs in the market today.

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