AUIRF1405

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	330W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5480pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	260nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	5.3 mOhm @ 101A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The AUIRF1405 is a power field effect transistor (FET) designed for use in general-purpose, high-voltage switching applications such as those that employ DC-DC converters and motor drives. Its design features a drain-to-source breakdown voltage of 1.4 KV, a drain current of 3.0 Amp and a resistance of 1.7 KOhm. It also offers a temperature-controlled spread of pulsed on-time for improved transformer efficiency.The AUIRF1405 is a 45V single N-channel enhancement-mode MOSFET. It is an ideal choice for high-side switching applications that require low input and low output RDS(on) values. This MOSFET is typically used in applications such as automotive lighting and motor drives, power management and switching power supplies.The basic structure of the AUIRF1405 consists of an n-type silicon substrate which is used as the source and drain of the device and a gate oxide layer which is on the silicon substrate. The oxide layer prevents electrons from moving through it, thus allowing current flow to be controlled.The working principle of the AUIRF1405 is based on the MOSFET structure. When the gate voltage is increased, it create an electric field, which attracts electrons from the source region towards the gate electrode, making the channel between drain and source conducting. By controlling the gate voltage, the flow of electrons through the channel can be varied, thus controlling the flow of current.The working characteristics of a MOSFET are usually expressed by its transfer characteristics which are obtained by plotting the drain current against the gate to source voltage for constant values of the drain to source voltage. The transfer characteristics of the AUIRF1405 show that it has a linear region of operation over a wide gate voltage range and a low threshold voltage.The drain to source breakdown voltage of the AUIRF1405 is 1.4 KV and its maximum drain current is 3.0 Amp. The device exhibits a relatively low resistance of 1.7 KOhm between its source and drain. The device is also capable of withstanding high temperature and has a temperature-controlled spread of pulsed on-time.The AUIRF1405 is mainly used in automotive lighting applications, DC-DC converters, motor drives, power management and switching power supplies. The narrow on-resistance and gate-controlled turn-on characteristics of the AUIRF1405 enable it to provide improved efficiency in these applications. The AUIRF1405 is a versatile and efficient device for a wide range of general-purpose, high-voltage switching applications. It has a drain-to-source breakdown voltage of 1.4 KV, a drain current of 3.0 Amp and a low resistance of 1.7 KOhm. It also offers a temperature-controlled spread of pulsed on-time for improved transformer efficiency. Thus, the AUIRF1405 is ideal for applications such as automotive lighting, DC-DC converters and power management.

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