AUIRF1405ZL

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The AUIRF1405ZL is an advanced technology N−channel vertical DMOS FET (Field Effect Transistor) perfect for automotive and consumer electronics applications. This FET was designed using Infineon\'s state-of-the-art vertical DMOS (deoxygenated MOS) process and has an enhanced anode-cathode breakdown voltage capability. Typical applications for the AUIRF1405ZL are boost converters, DC–DC converters, synchronous buck controllers, SCR gates, PFCs and lamp dimming controls.

The AUIRF1405ZL works by creating a single, broadening conduction channel between the source and the drain of the FET. This allows a majority carrier (normally electrons in an N-channel) to travel through the FET and create a drain current. The conductance of the FET is determined by the amount of carriers present in the channel (in a N-channel this is determined by the voltage on the gate terminal). By controlling the voltage on the gate terminal, the conductance of the FET can be changed and thus the current flowing through the FET is controlled.

The AUIRF1405ZL offers very low on-resistance, low gate charge and fast switching. The device comes in a space-saving 3-lead SOIC package which is optimized for through-hole mounting. With a peak drain current of 45A, it has excellent power handling ability making it a perfect choice for automotive and consumer electronics applications.

In summary, the AUIRF1405ZL is an advanced technology N−channel vertical DMOS FET that is perfect for automotive and consumer electronics applications. It is a versatile device that offers low on-resistance, low gate charge and fast switching. With a peak drain current of 45A, it has excellent power handling ability, making it ideal for automotive and consumer electronics applications.

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