Allicdata Part #: | AUIRF1405ZS-7P-ND |
Manufacturer Part#: |
AUIRF1405ZS-7P |
Price: | $ 1.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 120A D2PAK-7 |
More Detail: | N-Channel 55V 120A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | AUIRF1405ZS-7P Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.43142 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 88A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRF1405ZS-7P is a semiconductor device made up of two distinct components, known as the gate and the drain. It is a type of field effect transistor (FET), especially an insulated gate type, which makes it different from other types of transistors. The main job of the AUIRF1405ZS-7P FET is to amplify current. It is a type of single MOSFET which helps to minimize power loss when amplifying currents.
The AUIRF1405ZS-7P is a vertical DMOS FET, and it helps to reduce switching losses by providing an efficient connection between the gate and the drain areas. The device also has a wide channel width, which helps to reduce power losses and to increase the speed of switching. The device itself is quite small, with a package size of 2.5mmx2.5mm.
This device is often used in power management applications, such as switching and power supply circuits. It also finds use in low voltage applications, particularly due to its efficient and low power loss characteristics. It can be used for switching applications between 5 and 12 volts, and it can handle currents up to 1.3 Amperes. The device also has a low on-resistance of less than 70m〖Ω〗.
The working principle of the AUIRF1405ZS-7P is relatively simple. When a positive voltage is applied to the gate area, current begins to flow through the device which creates a voltage drop between the two areas. This voltage drop is known as the VGS voltage, and this is what helps to amplify the current. The VGS voltage can be adjusted using the gate control voltage.
The main advantage of the AUIRF1405ZS-7P FET is its low power consumption, which makes it very suitable for use in power management applications. The device is also particularly suitable for use in low voltage applications, due to its low on-resistance and wide channel width which help to minimize power losses. In addition, the device is also very reliable and has a high peak current rating.
In conclusion, the AUIRF1405ZS-7P is an efficient single MOSFET with a wide range of applications. Its high current rating and low power consumption makes it particularly suitable for use in power management applications. Additionally, the device is also well suited for use in low voltage applications due to its low on-resistance and wide channel width. Furthermore, it is highly reliable and has a high peak current rating, making it an excellent choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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