Allicdata Part #: | AUIRF1405ZS-ND |
Manufacturer Part#: |
AUIRF1405ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 150A D2PAK |
More Detail: | N-Channel 55V 150A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | AUIRF1405ZS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4780pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF1405ZS is an N-channel, enhancement-mode field-effect transistor (FET) that is designed to be used in a variety of applications, including low-frequency power switching, voltage-level voicing, switching converters, motor speed control, voltage and temperature regulation. In this article, we will discuss the various application fields and working principles of the AUIRF1405ZS.
Applications of the AUIRF1405ZS
The AUIRF1405ZS is a high-speed MOSFET that offers high input impedance and low output capacitance. It is an ideal choice for use in a variety of applications, including:
- Low-frequency power switching
- Voicing of voltage levels
- Switching converters
- Motor speed control
- Voltage & temperature regulation
The AUIRF1405ZS is also suitable for switching applications that require low-voltage and low-power operation. It is capable of operating in a wide range of temperatures and can be used in a variety of operating environments.
Working Principle of the AUIRF1405ZS
The AUIRF1405ZS works on the principle of the N-channel MOSFET. It is a voltage-controlled device that is used to control the flow of electrons between the source and the drain. The gate of the FET is connected to the source and is used to modulate the current flow between the source and the drain. When a voltage is applied to the gate, it will create an electric field within the FET, which will modulate the current flow between the source and drain.
The source and drain of the AUIRF1405ZS are also connected to a gate voltage. This gate voltage determines the threshold voltage of the FET, which dictates how much current is allowed to flow through the device. Depending on the applied gate voltage, the device can be operated in either an enhancement mode or a depletion mode.
In enhancement mode, the AUIRF1405ZS allows a large amount of current to flow through it when a positive voltage is applied to its gate. On the other hand, when operated in a depletion mode, the FET will not allow any current to flow through it when a negative voltage is applied to it. The AUIRF1405ZS is able to provide fast switching speeds and low on-resistance, making it an ideal choice for a variety of applications.
Advantages of the AUIRF1405ZS
The AUIRF1405ZS offers a number of advantages over other FETs, including:
- High breakdown voltage
- Fast switching speeds
- Low on-resistance
- High input impedance
- Low output capacitance
- High temperature operation
The AUIRF1405ZS is also rated for a wide range of temperatures, making it suitable for a variety of operating environments. This makes it an ideal choice for applications that require a reliable and efficient FET solution.
Conclusion
The AUIRF1405ZS is an N-channel, enhancement-mode FET that is designed for use in a variety of applications. It is capable of providing a high level of performance with its fast switching speeds, low on-resistance and high input impedance. It is also rated for a wide temperature range, which makes it suitable for a variety of operating environments.
The specific data is subject to PDF, and the above content is for reference
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