Allicdata Part #: | AUIRF1405ZSTRL-ND |
Manufacturer Part#: |
AUIRF1405ZSTRL |
Price: | $ 1.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 150A D2PAK |
More Detail: | N-Channel 55V 150A (Tc) 230W (Tc) Surface Mount D2... |
DataSheet: | AUIRF1405ZSTRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.17684 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4780pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Acutally, AUIRF1405ZSTRL is a type of N-channel enhancement mode gallium nitride (GaN) field-effect transistor (FET). It is a single-chip FET, with maximum ratings of 19 Amps and a maximum operating temperature of 175 degrees Celsius. Its low gate charge and low gate-source and gate-drain capacitance enable it to offer extreme speed and maximum power efficiency.
In the AUIRF1405ZSTRL application field and working principle, it is mainly used in run-time and fault current limiting applications in SMPS, such as power converters, AC-DC and DC-DC power converters, adapter, load, solar inverters and network communication systems. The primary function of the AUIRF1405ZSTRL is a switch that controls the flow of current, turning the current on or off when necessary. It also works as an amplifier which amplifies the current flowing through it by changing the parameters of its gate.
To understand the working principle of the AUIRF1405ZSTRL, we need to understand its basic structure and footprint. It has three basic terminals which correspond to the source, gate and drain. The source and drain are diffusion regions whose source, source+ and drain+ regions are completely separate. The gate terminal is insulated from both the source and drain, forming an oxide layer between the gate and the regions. The gate is where the controlling current is applied.
When a positive gate voltage is applied, the depletion layer beneath the gate is reduced, allowing more carriers to pass from the source to the drain and thus allowing current to flow through the device. This is known as the enhancement mode. A negative gate voltage will create a strong depletion layer and thus, no current will flow through the device. This is known as the depletion mode. The AUIRF1405ZSTRL can operate in both of these modes with ease.
The properties of the AUIRF1405ZSTRL enable it to work well with important controlling features, such as over-temperature protection, adjustable current limiting, power supply sequencing and control, over-voltage protection, short circuit protection and thermal fault protection. Its low gate charge and capacitance enables it to achieve fast switching times, which is desirable in applications such as consumer electronics and medical equipment.
Due to these benefits, the AUIRF1405ZSTRL is a popular choice for a variety of applications. Its fast switching speeds make it ideal for power converters and power control circuits, making it one of the best solutions for power management in consumer electronics, medical equipment and industrial equipment.
Overall, the AUIRF1405ZSTRL is a great choice for a variety of applications. Its low gate charge and capacitance make it fast switching with great reliability and efficiency. It is suitable for a wide range of applications and its features make it an ideal choice for industrial and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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