Allicdata Part #: | AUIRF2804-ND |
Manufacturer Part#: |
AUIRF2804 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 195A TO220AB |
More Detail: | N-Channel 40V 195A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | AUIRF2804 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRF2804 is a high-voltage, high-speed, N-Channel power MOSFET designed to minimize the ON-state resistance (RDS(on)) and capacitance of the source drain junction. It houses four power field effect transistors (FETs) in a single package and provides superior performance for voltage requirements up to 500V. The AUIRF2804 is commonly used in Automotive, Industrial, Medical, Telecommunications and Consumer Applications.
The working principle of the AUIRF2804 is based on the MOSFET concept. The device contains four FETs that are connected in series, each with its own gate terminal. Each FET in the AUIRF2804 operates independently, and is typically used to control the current between the source and drain. When a voltage is applied to the gate terminal, it creates a voltage drop at the source and drain, allowing current to pass. The amount of current that passes can be controlled by varying the voltage at the gate, allowing precise control of the current flow.
The AUIRF2804 is suitable for use in a variety of applications. It is commonly used in high power motor control, power supply enthusiasts, automotive electronics, Uninterrupted Power Supplies (UPS) and high voltage power converters. Additionally, the AUIRF2804 can be used in high frequency switching applications due to its low gate charge (Qg) and low gate-drain capacitance (Cgd).
The high voltage and high speed of the AUIRF2804 allows for high power applications that require a low RDS(On) and low switching losses. Furthermore, the low Cgd allows for high frequency operation and ensures that the device does not suffer from any high-frequency instability or ringing. The low on-resistance of the AUIRF2804 eliminates the need for an external gate driver, making it an ideal solution for high voltage, high power applications.
In conclusion, the AUIRF2804 is a highly advanced high-voltage N-Channel power MOSFET designed for high power applications. It combines four FETs in a single package while offering superior performance and low switching losses. The device can be used in Automotive, Industrial, Medical, Telecommunications and Consumer Applications, as well as high frequency switching applications due to its low Cgd and Qg.
The specific data is subject to PDF, and the above content is for reference
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