Allicdata Part #: | AUIRF2804S-7P-ND |
Manufacturer Part#: |
AUIRF2804S-7P |
Price: | $ 1.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 240A D2PAK-7 |
More Detail: | N-Channel 40V 240A (Tc) 330W (Tc) Surface Mount D2... |
DataSheet: | AUIRF2804S-7P Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.53133 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6930pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 160A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRF2804S-7P is a type of N-Channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) that is commonly used in a range of circuits and systems. This particular MOSFET has claimed to hold the world record low threshold voltage, allowing for features such as low gate drive applications. As a single power MOSFET, the AUIRF2804S-7P offers a range of benefits and features that make it ideal for a variety of applications. In this article, we will discuss the application fields and working principle of the AUIRF2804S-7P MOSFET.
Applications of the AUIRF2804S-7P
The AUIRF2804S-7P single MOSFET is primarily used in power circuits and systems due to its high efficiency. Some of its applications include:
- Power supply circuits
- Motor control circuits
- Load switching circuits
- DC-DC converter circuits
- Power inverter circuits
The AUIRF2804S-7P is designed to be used in any circuit where high efficiency, low gate drive and fast switching times are required. It is an ideal solution for circuits and systems that require reliable, low-loss power switching, such as solar and wind power systems.
Working Principle of the AUIRF2804S-7P
The AUIRF2804S-7P MOSFET is a type of N-Channel MOSFET, which operates using the principle of quantum tunneling. This occurs when electrons “leak” through an insulating material, such as the silicon dioxide of a MOSFET. In a MOSFET, the gate voltage creates a conductive region across the silicon dioxide material, allowing electrons to “tunnel” from the source to the drain. The amount of current that is able to flow between the source and drain is determined by the gate voltage, which can be controlled to provide very accurate switching times.
The AUIRF2804S-7P MOSFET has an extremely low threshold voltage of -4V, which allows it to be used in applications requiring very low power consumption. The device also features a very low on-state resistance of 0.0045ohms, meaning that it can offer extremely efficient performance. This makes it ideal for applications that require high-performance switching and low power consumption.
Conclusion
The AUIRF2804S-7P MOSFET is a single N-Channel MOSFET that is commonly used in power circuits and systems. It features a world record low threshold voltage of -4V, allowing for low gate drive applications. The AUIRF2804S-7P offers an impressive level of performance, with a low on-state resistance of 0.0045ohms and a high efficiency level. By utilizing the principle of quantum tunneling, the AUIRF2804S-7P is able to provide fast switching times and accurate control. Thanks to its impressive features and performance, the AUIRF2804S-7P is the ideal choice for any application that requires reliable and efficient power switching.
The specific data is subject to PDF, and the above content is for reference
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