Allicdata Part #: | AUIRF2805S-ND |
Manufacturer Part#: |
AUIRF2805S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 135A D2PAK |
More Detail: | N-Channel 55V 135A (Tc) 200W (Tc) Surface Mount D2... |
DataSheet: | AUIRF2805S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5110pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 104A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 135A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF2805S is a dual N-channel MOSFET with an ultra-low on-resistance RDS(on) of 0.022Ω. It is deployed in many different applications and is used to switch loads to a voltage supply.
The AUIRF2805S is built on an advanced Gallium Nitride (GaN) process technology, making it capable of operating at higher temperatures and utilizing less power. The device offers an extremely low on-resistance and a low gate charge, allowing for better efficiency and power delivery. In addition, the AuIRF2805S can operate up to 60V and is available in a Pb-free, RoHS compliant TO-220F Package.
The AUIRF2805S can be used to control the flow of current in power supplies, DC motors, DC-DC converters, and other applications. It has a low gate threshold voltage of 0.7V, which makes it well suited for designs with low gate voltages. Additionally, its low gate-drain capacitance makes it suitable for use in high-frequency switching applications.
The basic working principle for AUIRF2805S is that when a gate voltage higher than the threshold voltage is applied, the channel conductivity will increase. As a result, the current flowing from a voltage source to the load will be controlled by applying a voltage to the gate. The on-resistance RDS(on) is a function of temperature. Higher temperature increases the RDS(on), reducing the efficiency of the device.
In order for the AUIRF2805S to be used most effectively, it should be used in conjunction with a heatsink. The heatsink helps to dissipate heat and can also protect other components from damage due to thermal run-away. Additionally, it is important to install current limiting resistors in the gate and source leads to ensure that the gate voltage is not exceeded.
The AUIRF2805S is a highly versatile device with a wide range of applications. It is well suited for use in power supplies and control circuits, and can be used in a variety of switching applications. Additionally, its advanced GaN process technology makes it robust and efficient, making the AUIRF2805S a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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