AUIRF3205 Allicdata Electronics
Allicdata Part #:

AUIRF3205-ND

Manufacturer Part#:

AUIRF3205

Price: $ 2.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 110A TO-220AB
More Detail: N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-2...
DataSheet: AUIRF3205 datasheetAUIRF3205 Datasheet/PDF
Quantity: 76
1 +: $ 2.05380
50 +: $ 1.65841
100 +: $ 1.49253
500 +: $ 1.16087
1000 +: $ 0.96186
Stock 76Can Ship Immediately
$ 2.26
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3247pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The AUIRF3205 is a six inch, N-Channel MOSFET (metal-oxide semiconductor field-effect transistor) designed for advanced switching, high current handling and high switching speed applications. It has a state-of-the-art planar die structure and has a low On-state resistance. This makes it ideal for DC-to-DC converters, smart power supplies, and automotive applications.

The AUIRF3205 is a P-channel MOSFET with a maximum drain-source voltage of 400V. It has an On-state resistance RDS(on) of 0.08 ohms and a maximum drain-current of 10A. It also has a maximum gate-source voltage of 20V and a maximum gate-source current of 1.5A. It is rated for maximum junction temperature of 150°C.

When used as an electronic switch, the MOSFET will open or close depending on the voltage applied to its gate. A low voltage applied to the gate will turn the MOSFET off and a high voltage will turn it on. The AUIRF3205 is built with an integrated Schottky diode, which is used to protect the MOSFET from inductive back-EMF voltage spikes when it is used in switching applications.

When the MOSFET is switched on, current will flow through the MOSFET and the drain-source voltage will drop to the threshold voltage VTH. This voltage is determined by the material properties of the device and is typically about two to three volts. This is why a low voltage applied to the gate of the MOSFET is sufficient to turn it off.

When it is switched off, the MOSFET is in the “cut-off” region and no current will flow through the device. This region is determined by the device’s threshold voltage VTH and the voltage applied to the gate. If the voltage applied to the gate is higher than the device’s threshold voltage then it will be in the “on” region and current will flow through the MOSFET.

When used in switching applications, the AUIRF3205 has several advantages over other MOSFETs including fast switching times, low on-state resistance, high drain current capability and high switch voltage capability. It is suitable for a wide range of switching applications including low current battery operated circuits, high current DC-DC converters, and automotive applications.

The AUIRF3205 has been designed to meet the demanding requirements of automotive applications such as CO detection, airbag control and air conditioning systems. It is also suitable for low voltage and high power DC/DC buck and boost converters. Due to its low On-state resistance RDS(on) and low threshold voltage, it offers improved efficiency in power systems.

The wide variety of features and advantages make the AUIRF3205 an ideal solution for many power electronics applications. It is a reliable, cost effective and robust device that can be used in a wide range of switching and power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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