Allicdata Part #: | AUIRF3205ZS-ND |
Manufacturer Part#: |
AUIRF3205ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2P... |
DataSheet: | AUIRF3205ZS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 66A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF3205ZS is a type of single-channel, normally-off, 235V Field-Effect Transistor (FET) designed to optimize power efficiency and system performance in a vast array of applications. It features low voltage (<20V), low RDS(on) (<50 mΩ), and low gate charge (<18 nC). It is also available in an advanced OptiMOS® package that helps reduce power loss and waste heat generation.
The most prominent feature of this FET is its low resistance when switched on. This helps boost the efficiency of the electrical system, by minimizing the amount of power wasted as heat. Additionally, this feature helps reduce the size and cost of the system, since the power dissipated during operation is greatly reduced. This translates to reduced space, weight and cost for any given system.
The AUIRF3205ZS FET\'s working principle lies in its tiny gate region, surrounded by source and drain terminals, which works to control the flow of electrons and holes by creating a conducting channel or pocket. This pocket is created by the application of an external voltage to the gate itself, forcing a conductive path to be formed in the FET. This allows current to flow through it, as long as the voltage exceeds a certain threshold, also known as the “threshold voltage”. If the threshold voltage is not satisfied, the FET remains “off”, preventing current flow.
This FET is designed to suit various applications, such as telecom equipment, server and computer motherboards, and consumer electronics, to name a few. In servers and motherboards, for example, it helps optimize power efficiency since it uses less power during operation, reducing waste heat and allowing the system to run cooler. In consumer electronics, it helps improve power savings and reduce system waste. The FET also works as an electronic switch in applications such as air conditioning, battery management systems, and industrial motor control systems.
Aside from these, the AUIRF3205ZS FET is also used in consumer products and automotive power management systems. It can help regulate idle current, increasing fuel efficiency and reducing emissions in relation to vehicle performance. It also helps lower the total cost of ownership by eliminating the need for multiple power stages.
In summary, the AUIRF3205ZS is a type of single-channel, normally-off, 235V Field-Effect Transistor (FET) that features low voltage, low RDS(on) and low gate charge. It is designed to optimize power efficiency and system performance in a vast array of applications, such as telecom equipment, server and computer motherboards, consumer electronics, consumer products and automotive power management systems. Its working principle lies in its gate region, which creates a conducting channel or pocket by the application of an external voltage, allowing current to flow.
The specific data is subject to PDF, and the above content is for reference
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