AUIRF3315STRL Allicdata Electronics
Allicdata Part #:

AUIRF3315STRL-ND

Manufacturer Part#:

AUIRF3315STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 21A D2PAK
More Detail: N-Channel 150V 21A (Tc) 3.8W (Ta), 94W (Tc) Surfac...
DataSheet: AUIRF3315STRL datasheetAUIRF3315STRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRF3315STRL is a single N-Channel, 4.5-volt, 55-amp, 27-mOhm insulated-gate bipolar transistor (IGBT) with low gate-charge capability. Specifically designed for switching applications, it is ideal for driving MOTOROLA VIPER series SCR\'s and building anti-parallel diode fly wheels.

The purpose of the AUIRF3315STRL is to regulate the flow of current through an electrical circuit and to enable switching on and off of electrical devices in a controllable and efficient manner. By using an insulated-gate bipolar transistor (IGBT) like the AUIRF3315STRL, designers can build circuits that switch on and off more rapidly and use less power than a traditional metal-oxide semiconductor field effect transistor (MOSFET).

An IGBT is a type of transistor that consists of an insulated gate and two transistors in a single package. The insulated gate is used to control the current passing between the two transistors. To switch the current on and off, a voltage is applied to the gate of the IGBT which controls the flow of electrons through the two transistors. The IGBT is used to regulate the current in a circuit since it can switch on and off quickly and precisely.

The AUIRF3315STRL utilizes a low voltage gate design which enables the device to operate with a maximum of 4.5V gate-source voltage. This helps the device to properly manage the SCR and diode power management systems. The AUIRF3315STRL also has a low drain-source on-resistance of 27 mOhms, which ensures a low resistance path between the low-side and high-side FETs in the circuit. The AUIRF3315STRL also includes a temperature which keeps the device from overheating.

The AUIRF3315STRL has a number of applications where it can be used, including automotive engines, powertrain devices and motor control. It is also commonly used in the lighting, HVAC and industrial automation control industries. The device can also be used in flyback, forward and buck-boost converters for power management and regulation.

In summary, the AUIRF3315STRL is a single N-Channel, 4.5-volt, 55-amp, 27-mOhms insulated-gate bipolar transistor (IGBT) designed for switching applications. Featuring low gate-charge capability and a low drain-source on-resistance, the device can be used to regulate the current in a circuit, switch on and off electrical devices, and manage power in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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