Allicdata Part #: | AUIRF3415-ND |
Manufacturer Part#: |
AUIRF3415 |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 43A TO-220AB |
More Detail: | N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-... |
DataSheet: | AUIRF3415 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.13977 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Nowadays, in various applications, transistor usage is widespread. Particularly, Field-Effect Transistors (FETs) are extensively used in various digital circuits, as they are much smaller than conventional bipolar junction transistors and its structure has fewer parts. They are also more efficient than their counterparts.
The AUIRF3415 is a power MOSFET that is suitable for use in high-speed switching applications, such as inverters and motor drivers. It is a single-n-channel high-voltage MOSFET with very low on-resistance and excellent switching performance, typically for frequencies up to 1 MHz. Additionally, the AUIRF3415 is rated for voltage levels up to 500V, making it suitable for applications such as motor drives and power supplies.
The AUIRF3415 is a typical Board Level product and is available in many different packages, including surface-mount and through-hole packages. It has three pins, Drain (D), Gate (G) and Source (S). Its Drain and Source pins are connected internally to the drain region and source region of the MOSFET, while the Gate pin is internally connected to the gate oxide and connects it to the control voltage.
The AUIRF3415 can be used in various applications, such as switch mode power supplies for DC-DC conversion, interleaved converter, inverter, and motor drivers. It also can be used in low-power audio amplifiers, low-power switches, and as a load switch.
The working principle of the MOSFET AUIRF3415 is based on the transfer of electrical charge from source to drain. The gate region of the MOSFET is insulated from the conducting channel using an oxide film. The gate voltage is applied between the Drain and the Gate. When a positive voltage is applied between the Gate and the Source of the MOSFET, an electric field is created inside the device. This electric field then attracts electrons from the source, which enter the gate region and provide a conductive path for electrons between the Source and Drain. As the voltage between the Gate and the Source increase, more electrons enter the gate region, which leads to an increased current flow from the Source to the Drain.
In conclusion, the AUIRF3415 is a single-channel high-voltage MOSFET with excellent switching performance and very low on-resistance. It is suitable for use in high-speed switch mode power supplies for DC-DC conversion, interleaved converter, inverter, and motor drivers. It\'s also applicable in low-power audio amplifiers, low-power switches, and as a load switch. The working principle of the MOSFET AUIRF3415 is based on the transfer of electrical charge from source to drain.
The specific data is subject to PDF, and the above content is for reference
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