Allicdata Part #: | AUIRF3504-ND |
Manufacturer Part#: |
AUIRF3504 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 87A TO-220AB |
More Detail: | N-Channel 40V 87A (Tc) 143W (Tc) Through Hole TO-2... |
DataSheet: | AUIRF3504 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 143W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.2 mOhm @ 52A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 87A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The AUIRF3504 is a single-stage power field effect transistor (FET) designed for switches and power switching applications. It has an insulated gate bipolar transistor (IGBT) structure that integrates an enhancement-mode MOSFET with an NPN bipolar transistor. The device contains an internal low-resistance Schottky diode, which features a very low forward voltage drop and fast reverse recovery time. The device also provides a low gate-charge and low on-state resistance, which makes it suitable for high-frequency switching applications.
The AUIRF3504 is designed to provide a high input impedance, fast switching speed and low gate-charge ripple. It is also known for its high power handling capability, high frequency operation and low on-state resistance. The device is suitable for use in a variety of power applications such as DC/DC converters, Class D audio amplifiers and DC/AC inverters. It is also capable of switching currents up to 80A and voltage up to 600V.
The working principle of the AUIRF3504 is based on the IGCT structure, which is a combination of two transistors. The IGBT acts as a voltage controlled device, while the NPN transistor acts as a current controlled device. When the gate voltage of the IGBT is increased, the NPN transistor turns on and the device operates as a switch. As the voltage on the gate of the NPN transistor is decreased, the IGBT turns off and the device operates as an open switch. When the voltage on the gate of the NPN transistor is increased, the IGBT turns on and the device operates as a closed switch.
The advantages of the AUIRF3504 include its fast switching speed, low gate-charge ripple, low on-state resistance, high input impedance and high frequency operation. The device’s high power handling capability also makes it suitable for high current and voltage applications. Additionally, the device’s integrated Schottky diode provides a very low forward voltage drop and fast reverse recovery time.
The AUIRF3504 is suitable for a variety of power management applications such as DC/DC converters, Class D audio amplifiers and DC/AC inverters. It can also be used in motor control applications, where its high frequency operation provides fast switching and reduced switching losses. In addition, the device can be used in logic circuits, such as high-side and low-side switch controllers.
In summary, the AUIRF3504 is a single-stage power field effect transistor designed for switch and power switching applications. It features an IGBT structure and an integrated Schottky diode, which provides a low forward voltage drop and fast reverse recovery time. The device has a wide range of applications, including DC/DC converters, Class D audio amplifiers, DC/AC inverters, motor control circuits, and logic circuits. It is known for its fast switching speed, low gate-charge ripple, low on-state resistance, high input impedance, and high frequency capability.
The specific data is subject to PDF, and the above content is for reference
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