Allicdata Part #: | AUIRF3805S-7TRL-ND |
Manufacturer Part#: |
AUIRF3805S-7TRL |
Price: | $ 1.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 160A HEXFET |
More Detail: | N-Channel 55V 160A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | AUIRF3805S-7TRL Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.77824 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7820pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 140A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRF3805S-7TRL is a high-voltage Field Effect Transistor (FET), designed to operate with a high performance level in both the single and dual depletion modes. Specifically, the AUIRF3805S-7TRL is an enhancement-mode, N-channel MOSFET that is designed for use in power management applications.
At its most basic, the AUIRF3805S-7TRL is a FET that consists of a pass gap and control gate. The current flow from source to drain is controlled by the voltage applied to the gate terminal. When the voltage applied to the gate terminal is positive, the current flow is positive – that is, electrons flow through the transistor. Conversely, when a negative voltage is applied to the gate terminal, the current flow is negative – that is, holes flow through the transistor.
The AUIRF3805S-7TRL\'s P-Channel dual depletion mode allows it to operate in a bi-directional manner. Specifically, the control gate supplies an inverse field, which causes the drain-source leakage current to flow in either direction. This effectively allows the user to configure the transistor for either unidirectional or bidirectional operation. Additionally, the AUIRF3805S-7TRL offers a high speed response in both modes with its innovative insulation gate construction. The high-speed characteristics make the AUIRF3805S-7TRL an ideal choice for high-performance applications.
The AUIRF3805S-7TRL is designed for a variety of applications, including power management, voltage switching, circuit protection, and audio amplifiers. It is well suited for use in any application that requires a bi-directional power switch. Additionally, the AUIRF3805S-7TRL is capable of providing energy savings due to its high-speed switching characteristics, which helps to reduce power consumption.}
The AUIRF3805S-7TRL is a powerful and reliable device, capable of handling high voltage levels with ease. Its dual-depletion mode construction provides bi-directional capabilities and allows for high-speed switching, making it an attractive solution in a variety of applications. Furthermore, the design minimizes the amount of energy needed to switch the device, making it highly energy efficient and an ideal choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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