Allicdata Part #: | AUIRF540ZS-ND |
Manufacturer Part#: |
AUIRF540ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 36A D2PAK |
More Detail: | N-Channel 100V 36A (Tc) 92W (Tc) Surface Mount D2P... |
DataSheet: | AUIRF540ZS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 92W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1770pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 26.5 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF540ZS is a premium performance MOSFET that is well suited for a variety of applications. It\'s a versatile component that can be used in both analog and digital designs.
A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of field effect transistor (FET). The FET is an electronic component that is used for switching and amplifying electrical signals. It is the most widely used type of transistor in modern digital systems. The AUIRF540ZS MOSFET is a single transistor, meaning it has only one gate, source, and drain. This type of MOSFET is popular as it is often applied to high voltage or current applications.
The AUIRF540ZS provides fast switching performance, low gate charge, and low on-resistance. This allows it to be used in many switching power supply applications, such as voltage regulators, switching AC-DC converters, and DC-DC converters. It is also suitable for driving high-power loads in motor control and industrial automation applications. The device also has an avalanche energy rating that is suitable for use in automotive and consumer electronics systems.
The AUIRF540ZS offers superior performance compared to standard discrete MOSFETs. The device is designed with a single on-resistance of 0.4 Ohms and a drain-source voltage of 500V. This makes it ideal for use in high-power applications, as it can handle large amounts of current. It also has a high-frequency switching capability, allowing it to be used in applications such as DC-DC converters and in high-frequency switching applications.
The working principle of AUIRF540ZS is based on the basic operating principles of FETs. A gate voltage is applied to the gate terminal, which creates a gate-to-source electric field. This electric field, known as the channel, attracts the electrons between the source and the drain and increases the current flow. The device\'s low on-resistance allows the current to flow even at low gate-to-source voltages, with minimal power loss.
In summary, the AUIRF540ZS is a versatile MOSFET that is well suited for a variety of applications. It provides excellent switching performance, low on-resistance, and high-frequency switching capability. This makes it ideal for use in high-power applications and for driving high-power loads. Its working principle is based on the basic operating principles of FETs, and its single on-resistance allows it to handle large amounts of current while minimizing power loss.
The specific data is subject to PDF, and the above content is for reference
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