Allicdata Part #: | AUIRF6215S-ND |
Manufacturer Part#: |
AUIRF6215S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 150V 13A D2PAK |
More Detail: | P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surfa... |
DataSheet: | AUIRF6215S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF6215S is a high-speed, high-density N-channel MOSFET. This device is capable of handling power supplies of anywhere from 20 V to 100 V and devices with current ratings of up to 100 A. The device has been designed for applications that require high power, low charge, and significantly higher current levels when compared to standard MOSFETs. It features low on-state resistance and excellent current control, making it suitable for medium to high power switching and amplification.
The main field of application of AUIRF6215S is motor control and power conditioning. It can be used for direct switching of AC and DC motor drives, as well as for bi-directional power conversion applications. It is also suitable for power switching, such as switching off heavy-duty loads such as motors, relays, and capacitors. It can also be used for driving LEDs and other high power output devices.
The working principle of the device is based on metal-oxide-semiconductor field effect transistor (MOSFET). It consists of three terminals - the gate, the source, and the drain. A voltage applied to the gate creates an electric field in the device which controls the current flow from the source to the drain. A higher voltage will increase the electric field strength and hence increase the current flow. By adjusting the gate voltage, the device can be used for switching and amplification.
To ensure proper operation of the device, it must be connected with the correct circuitry. The source and drain terminals should be connected to the appropriate power supplies, while the gate should be connected to the control circuit. The device works best when the gate voltage is higher than the source voltage, which is referred to as the threshold voltage. This threshold voltage is determined by the threshold voltage of the device and should be carefully selected to ensure optimal performance.
In order to control the device, various techniques can be used. One of the most common techniques is the pulse width modulation (PWM), which utilizes MOSFETs to create a pulse that can be used to control the device. Another technique is the frequency modulation technique, which is similar to PWM but uses a frequency instead of a pulse width. This technique requires the use of an oscillating gate voltage, which can be adjusted to attain the desired current control.
The AUIRF6215S is a versatile MOSFET which is capable of handling a wide range of applications. Its features and design make it suitable for switching and amplifying high power, low charge devices. The device can be controlled by various techniques, such as PWM or frequency modulation. The device is suited for use in motor control and power conditioning applications.
The specific data is subject to PDF, and the above content is for reference
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