Allicdata Part #: | AUIRF7207Q-ND |
Manufacturer Part#: |
AUIRF7207Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 5.4A 8SOIC |
More Detail: | P-Channel 20V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | AUIRF7207Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 5.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AURF7207Q is a single n-channel enhancement-mode power field-effect transistor (FET) from Fairchild Semiconductor. It is mainly used for high-voltage, high-speed switching applications, such as switched-mode power supplies (SMPS) for computers, cell phones, and other electronic equipment.
The AURF7207Q is a high-performance FET, built from advanced silicon-based semiconductor technology. It is also rated to withstand high power levels and temperatures, making it a durable and reliable component. The AURF7207Q features a low on-resistance and a wide operating temperature range of -55°C to 150°C. The device is available in a TO-220 package.
The AURF7207Q has a variety of applications, including the switching mode power supplies (such as laptop computer adapter and DC-DC converters), motor controllers, battery packs, and other high-voltage, high-power switching applications. The FET is also well suited for high-reliability, high-temperature, or high-voltage switching applications.
The AURF7207Q works by allowing an electric current to flow between the drain terminal and the source terminal when a voltage is applied to the gate terminal. The gate terminal acts as a gate keeper, allowing or blocking current flow to the drain terminal. When the gate voltage is positive, the AURF7207Q is in the "on" state, allowing current to flow from the drain to the source. When the gate voltage is negative, the FET is in the "off" state, blocking current flow between the drain and source. The AURF7207Q features a low on-resistance and a wide Gate-Threshold Voltage (VgsTH) range, ensuring reliable performance and lower power consumption.
The AURF7207Q has an Avalanche Energy Rating of 25mJ, making it well suited for applications operating in harsh environment, such as high-voltage and high-power switching applications. The FET also features a high breakdown voltage rating of 100V, ensuring reliable performance in high-voltage applications. The AURF7207Q is also well-suited for high-reliability, high-temperature, or high-voltage switching applications.
Overall, the AURF7207Q is a durable, reliable, and high-performing FET for high-voltage, high-speed switching applications. Its low on-resistance, wide operating temperature range, and high breakdown voltage rating make it a popular choice for many electronic switching applications, such as switch mode power supplies and motor controllers. In addition, the AURF7207Q is well-suited for high-reliability, high-temperature, or high-voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
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