Allicdata Part #: | AUIRF7416QTR-ND |
Manufacturer Part#: |
AUIRF7416QTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 10A 8SOIC |
More Detail: | P-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | AUIRF7416QTR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.04V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRF7416QTR is a N-Channel MOSFET which is specifically designed for high power switching applications and high frequency DC-DC converters. This device is also ideal for low voltage, high efficiency and low gate charge applications. Its rugged design makes it extremely suitable for applications in harsh environments, offering reliable service and excellent performance.
The AUIRF7416QTR is a high speed MOSFET with excellent power cycling characteristics. It is useful in applications where switching speed and voltage reach levels of several hundred volts and high frequency switching is required. Its extremely low on-state resistance and fast switching speeds make it suitable for high current, high frequency, and high efficiency applications. Furthermore, its high input capacitance makes it well suited for DC-DC converters. The AUIRF7416QTR is also capable of handling large load currents and can be used for switching of high power loads.
In addition to its excellent performance, the AUIRF7416QTR also has some unique features. Its robust package offers reliable and consistent performance and is suitable for operation in harsh environments. The AUIRF7416QTR has an on-state resistance of 0.1 ohms, a maximum drain-source breakdown voltage of 650V, and a maximum drain current of 40A. Furthermore, it also has a fast switching time and a high input capacitance.
The AUIRF7416QTR utilizes a vertical DMOS construction which is similar to those used in vertical N-Channel MOSFETs. In these types of devices, the N-Channel is formed from the layer of material in between the source and the drain. The DMOS (Drain Metal Oxide Semiconductor) construction is designed to efficiently transfer electrons from source to drain and back. Apart from this, the vertical construction also helps to reduce the die area and effectively prevents source-drain shorts.
The working principle of the AUIRF7416QTR revolves around the basic function of any MOSFET. This device is a voltage controlled device and has no gate current. When a reverse bias voltage is applied to the gate, the N-Channel between the source and the drain will be opened up, allowing the current to flow. As the voltage on the gate increases, the N-Channel will be opened up more, allowing more current to flow. By controlling the gate voltage, the flow of current in the channel can be controlled.
The AUIRF7416QTR is ideal for a variety of applications, such as high power switching, high frequency DC-DC converters, and motor control. Its low on-state resistance and high input capacitance make it ideal for low voltage, high efficiency and low gate charge applications. Its rugged design means that it can also be used in harsh environments, offering reliable service and excellent performance.
The specific data is subject to PDF, and the above content is for reference
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