AUIRF7478Q Allicdata Electronics
Allicdata Part #:

AUIRF7478Q-ND

Manufacturer Part#:

AUIRF7478Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 7A 8SOIC
More Detail: N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SO
DataSheet: AUIRF7478Q datasheetAUIRF7478Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The AUIRF7478Q is a type of single field-effect transistor (FET). It is an insulated gate type FET that utilizes an electric field to control an electric current. It provides a very low on-state resistance and is capable of handling high-power loads with an impressive switching speed. As such, it is suitable for a wide range of industries and applications.

The single FET is a three-terminal device consisting of a source terminal, a drain terminal, and a gate terminal. The source and drain terminals are both connected to electric leads, while the gate terminal is connected to an insulated gate electrode. When a voltage is applied between the source and the drain terminals, the electric current between these terminals is switched on. To control the electric current, a voltage is applied to the insulated gate electrode through the gate terminal. The electric field generated at the gate terminal will then alter the movement of electrons between the source and drain terminals, which will control the flow of electric current.

As such, it is logic-controlled device. This means that the voltage applied to the insulated gate electrode will either increase or decrease the flow of electric current between the source and drain terminals. This is done by manipulating the electric field created at the gate terminal. In the case of the AUIRF7478Q, the voltage applied to the gate terminal can be as low as 0.3V and as high as 0.7V.

The AUIRF7478Q is most commonly used in high-performance switching systems. Applications that require high-current switching, such as automotive power systems, can benefit from the improved controllability and low on-state resistance that it provides. In addition to automotive systems, the AUIRF7478Q is also suitable for applications such as lighting control systems, telecommunications systems, computing systems, and industrial control systems.

Apart from the high current-handling capacity, the AUIRF7478Q also offers a very low power dissipation. This is because the power dissipation of this type of device can be kept to a minimum by reducing the voltage applied to the gate terminal. This is beneficial for applications that require a low-power solution, such as battery-powered electronics. In addition, the device is capable of providing a very fast switching response, making it suitable for high-speed applications, such as computing and telecommunications systems.

Another advantage of the AUIRF7478Q is its relatively small physical size. This single FET is available in a variety of package sizes, making it ideal for space-constrained applications. This is particularly useful for applications where board space is limited, such as portable electronics and laptop computers.

In summary, the AUIRF7478Q is a very versatile single field-effect transistor that is suitable for a wide range of high-performance applications. Its low on-state resistance and impressive switching speed makes it ideal for a variety of high-current switching systems, such as automotive and industrial control systems. In addition, its small size makes it suitable for space-constrained applications, such as portable electronics and laptop computers. As such, it is an excellent choice for applications that require both high performance and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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