AUIRF7669L2TR Discrete Semiconductor Products

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The AUIRF7669L2TR is a single enhancement-mode field effect transistor (FET) designed for low voltage switching applications. It has a total gate charge of 4.3nC and a drain-source on resistance (RDSOn) of 2.8ohms in a very small SOT-23-6 package. This makes it well suited for space-constrained applications, such as portable devices, where low voltage and high current switching is needed.

The AUIRF7669L2TR is manufactured using an optimized high voltage process that maximizes RDS(on) performance while keeping the capacitance low. The on-resistance of this FET is much lower than other MOSFETs, making it well suited for switching applications. Its low gate charge and low Ron make it ideal for high frequency applications. In addition, its high reliability ensures reliable operation in harsh conditions.

The working principle of the AUIRF7669L2TR is based on the theory of Minority Carrier injection. Minority Carrier injection occurs when electrons or holes are injected, or drained, from one region of the semiconductor material to another. This is the basis of all FET transistors, and the principle behind the AUIRF7669L2TR’s operation. When the gate voltage is applied, the current between the source and drain increases because of an increase in the number of majority carriers (electrons or holes) flowing through. This is due to the increase in the number of minority carriers injected into the channel by the effect of the gate voltage, thus allowing current to flow from source to drain.

The AUIRF7669L2TR is an effective switching device in applications such as motor control, power supply, and other power and signal control applications. Due to its low on-resistance and low gate charge, it is highly efficient and provides high speed switching in high current applications. It also offers high reliability due to its high surge capability and ESD protection. Additionally, its small size and low cost make it an attractive choice for use in other power applications.

The AUIRF7669L2TR is an important part of a wide range of switching applications due to its combination of low on-resistance, small size, and high reliability. Its high switching speed and low gate charge offer excellent switching performance in applications where high current and power are required. The combination of low on-resistance and a small, low cost package makes it an ideal choice for low voltage, high current, and power applications. In addition, its high surge capability and ESD protection ensure that it is reliable and safe for use in a variety of different applications.

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