Allicdata Part #: | AUIRF7732S2TR-ND |
Manufacturer Part#: |
AUIRF7732S2TR |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 14A DIRECTFET |
More Detail: | N-Channel 40V 14A (Ta) 2.5W (Ta), 41W (Tc) Surface... |
DataSheet: | AUIRF7732S2TR Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.47052 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | DirectFET™ Isometric SC |
Supplier Device Package: | DIRECTFET™ SC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.95 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRF7732S2TR transistor belongs to the family of Single MOSFETs and offers better performance in a variety of applications.
This transistor is ideal for use in high and low power supply applications. It is capable of providing excellent performance and long service life. Its low on-resistance and low gate charge allow it to be used in applications that require fast switching speed. It also offers improved ESD protection and improved thermal performance.
The AUIRF7732S2TR is a low-voltage, single-channel MOSFET. It has a low on-resistance of about 7.1 Ω and a low gate threshold voltage of about -2.5 V. This makes it suitable for applications operating from a low source voltage. It also has a maximum drain current of 75 A, which makes it highly efficient for use in high power applications.
This transistor also features a low gate capacitance and gate dielectric gate-source breakdown voltage of greater than 10 V. Its low gate dielectric breakdown voltage makes it compatible with low-voltage applications. It also features low gate-source leakage, which allows it to be used in low-leakage applications. This device has a junction-to-case thermal resistance of 17°C/W, which makes it suitable for use in high-duty cycle applications.
In addition, the AUIRF7732S2TR provides improved switching speed. It can switch from ON to OFF state in less than 5 ns and from OFF to ON state in less than 8 ns. This enables fast switching operations, which can be greatly beneficial for applications requiring high speed.
The working principle of the AUIRF7732S2TR is based on the MOSFET’s source-drain voltage (VDS). When a positive voltage is applied to the gate, the voltage between the source and drain will decrease. This decrease in voltage between the source and drain will reduce the resistance between them, allowing current to flow. This process is known as the “valley effect” and is responsible for the transistor’s low on-resistance.
The AUIRF7732S2TR can be used in a variety of applications. It can be used in high efficiency power supplies, high voltage power supplies, motor drive circuits, and overload protection circuits. It can also be used in switching converters, low-level signal sensing circuits, low-voltage power devices, and power control circuits.
The AUIRF7732S2TR is an ideal choice for applications that require high power and low on-resistance. Its low gate capacitance and gate dielectric breakdown voltage make it suitable for use in low-voltage applications. Its low gate-source leakage and high switching speed also make it a great choice for high-speed applications. The flexibility of the AUIRF7732S2TR makes it a perfect choice for many high-power, low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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