AUIRF7737L2TR Allicdata Electronics
Allicdata Part #:

AUIRF7737L2TR-ND

Manufacturer Part#:

AUIRF7737L2TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 315A DIRECTFET
More Detail: N-Channel 40V 31A (Ta), 156A (Tc) 3.3W (Ta), 83W (...
DataSheet: AUIRF7737L2TR datasheetAUIRF7737L2TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: DirectFET™ Isometric L6
Supplier Device Package: DIRECTFET L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5469pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 94A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 156A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AUIRF7737L2TR is a type of transistor designed to control high-power electrical and electronic systems. It is part of the “Single” group of Field Effect Transistors (FETs) and is designed to provide a higher level of energy, strength, and efficiency compared to other transistors in its class. The AUIRF7737L2TR is often used in applications such as motor control, IGBT driver stages, and power conversions.

The AUIRF7737L2TR device has a number of features and unique characteristics that make it an excellent choice for a variety of applications. It is able to control the voltage, current, and power of one or more devices that are placed in series, as well as its own self-regulating current limit. Additionally, the device has an extended temperature range, up to +150C, making it suitable for use in high-temperature environments. The device also has an improved load-bearing capacity, with an Enhanced Load Punch-through Characteristics (ELPC) feature that is designed to protect the device by decreasing current when the gate voltage drops due to a high load.

The principle of operation of the AUIRF7737L2TR is based on its design as a single FET. A FET is a field effect transistor, which is a semiconductor device that is structured with three terminals. The source and drain of the device are connected by an external electric field between them, and the field can be manipulated by changing the applied voltage. The voltage is applied to the gate terminal, and the device acts as a variable resistor between the source and drain terminals. This variable resistor allows the user to control the current flowing through the device, by varying the control voltage.

The AUIRF7737L2TR is an extremely versatile device, and can provide a wide range of electronic solutions. It is particularly useful in applications that require precisely controlled high power levels and variable current control. Some of the applications the AUIRF7737L2TR is well suited for include motor control, drive stages, IGBT driver stages, power conversion, and switch mode power supplies. This device is also ideal for use in applications where high temperatures are present, such as in welding processes. In these cases, the AUIRF7737L2TR is able to provide reliable operation without sacrificing performance or reliability.

In conclusion, the AUIRF7737L2TR is a robust high-power transistor that is able to provide precisely controlled current, voltage, and power control. This performance is achieved through its design as a single FET, its extended temperature range, and its enhanced load punch-through characteristics. The AUIRF7737L2TR device is therefore suitable for use in a wide range of applications, including motor control, IGBT driver stages, power conversions, and switch mode power supplies, as well as reliable operation under high temperature conditions.

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