Allicdata Part #: | AUIRF7739L2TR-ND |
Manufacturer Part#: |
AUIRF7739L2TR |
Price: | $ 2.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 375A DIRECTFET2 |
More Detail: | N-Channel 40V 46A (Ta), 270A (Tc) 3.8W (Ta), 125W ... |
DataSheet: | AUIRF7739L2TR Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 2.13550 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | DirectFET™ Isometric L8 |
Supplier Device Package: | DIRECTFET L8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11880pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1 mOhm @ 160A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Ta), 270A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.A IRF7739L2TR is a type of silicon-based MOSFET (metal-oxide-semiconductor field-effect-transistor). It is a single MOSFET, and it is used in a range of applications from computer processing, power supplies, and switch-mode power-supply applications, to automotive and light industrial products. The IRF7739L2TR is specifically designed for reverse-blocking performance, with a minimum break down voltage of 30V and a maximum drain current of 6.1A. It is ideal for applications that need to protect electrical circuits from excessive current.
The MOSFET\'s operation is based on the standard principle of operation of a field-effect-transistor, where a voltage is applied to a gate that controls the flow of current between the drain and the source. In the case of the IRF7739L2TR, the gate is insulated by the gate oxide and is receptive to small changes in voltage, allowing the device to be used as an electronic switch. When the gate is at 0V, the channel is blocked, meaning that no current flows between the drain and the source. But when the gate is at a potential greater than 0V, the channel is opened and current begins to flow between the drain and the source.
The IRF7739L2TR is often used in a variety of applications due to its capability to provide both low RDS(ON) and low total gate charge. Low RDS(ON) is the on-state resistance between the drain and the source and is an indication of how efficiently the power transfer is from the electric source to the drain. Low total gate charge is a measure of how much energy is needed to control the gate voltage in the device and affects efficiency when it is used in switch-mode power supply applications.
Other types of applications for the IRF7739L2TR include power supply and motor control, as it has a low threshold voltage of 1V and can sink up to 6.1A of current. That makes it suitable for applications where the device must handle large currents while maintaining a low change in its operating voltage. This makes the device well-suited for automotive and light industrial products. It can also be used in switching regulated power supplies, particularly those that require a high level of reliability.
The IRF7739L2TR is a popular transistor for its unique features, and its ability to perform small voltage and large currents. It is an ideal choice for low RDS(ON) applications such as electrical protection, switch-mode power supply, and motor control. With its low threshold voltage and high drain current capabilities, the device is also well suited for automotive and light industrial products where reliability is essential.
The specific data is subject to PDF, and the above content is for reference
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