AUIRF7799L2TR Allicdata Electronics
Allicdata Part #:

AUIRF7799L2TR-ND

Manufacturer Part#:

AUIRF7799L2TR

Price: $ 2.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 250V 35A DIRECTFET
More Detail: N-Channel 250V 375A (Tc) 4.3W (Ta), 125W (Tc) Surf...
DataSheet: AUIRF7799L2TR datasheetAUIRF7799L2TR Datasheet/PDF
Quantity: 1000
4000 +: $ 1.95155
Stock 1000Can Ship Immediately
$ 2.17
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: DirectFET™ Isometric L8
Supplier Device Package: DIRECTFET L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 38 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRF7799L2TR is an isolated, high-performance, N-Channel MOSFET. The integrated transmitter device combines an isolated N-Channel MOSFET driver and protection circuitry with an isolated DCDC converter, and is capable of providing isolation up to 4kV. This device is ideal for applications that require high isolation capability and high switching performance.

The AUIRF7799L2TR device offers low RDSON and fast switching performance, making it suitable for high-power switching applications, such as motor drives and industrial power supplies. The integrated protection circuitry offers robust protection against drain-to-source short-circuits, which helps to protect the device from damaging event triggers and transient over-currents. The high-efficiency, isolated DC/DC converter allows for wide input voltage range and allows for scaling up or down input power.

The AUIRF7799L2TR is suitable for a wide range of applications, including motor drive, high-voltage power supply and power management, sound amplification and industrial automation. The device is capable of controlling up to 768VDC, making it suitable for high voltage applications. The high power handling capability, low on-state resistance, and fast switching performance make it suitable for high power applications, such as motor drives and power supplies. The device is also suitable for audio amplification and sound amplifiers.

The AUIRF7799L2TR working principle essentially involves the use of the metal-oxide-semiconductor field-effect transistor (MOSFET) as a controller. This transistor has three terminals, the source, gate and drain. A voltage applied to the gate terminal of the MOSFET creates an electric field that modulates the conductivity between the source and the drain terminal. This modulation is used to control the flow of current through the device. The AUIRF7799L2TR features an integrated power supply, driver and protection circuitry that allows it to be used in high voltage applications.

The driver circuitry is responsible for controlling the gate voltage in order to properly operate the switching process. The protection circuitry helps to protect the device from damaging events such as short-circuiting and over-currents. The isolated DCDC converter allows for a wide input voltage range and allows for scaling up or down input power.

The AUIRF7799L2TR is a highly efficient and reliable device that is ideal for applications that require high isolation capabilities and high switching performance. The integrated protection circuitry helps protect the device from damaging events. The high power handling capabilities, low resistance and fast switching performance make it ideal for high power applications, such as motor drives and power supplies. It is also suitable for audio amplification and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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