Allicdata Part #: | AUIRFB4410-ND |
Manufacturer Part#: |
AUIRFB4410 |
Price: | $ 1.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 75A TO220AB |
More Detail: | N-Channel 100V 75A (Tc) 200W (Tc) Through Hole TO-... |
DataSheet: | AUIRFB4410 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.01491 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 58A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFB4410 is a single N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a type of transistor which has very low overall power loss, switching speed, high operating temperature and excellent thermal characteristics compared to regular BJTs and other FETs. The AUIRFB4410 is the perfect choice for applications where a high performance and reliable switching action is required.
The working principle of a MOSFET transistor is rather simple. A "gate" voltage is applied to the channel between the drain and source terminals. When a positive voltage is applied, the channel is opened up and the flow of current is increased, allowing the device to be used as a switch or amplifier. Conversely, when a negative voltage is applied, the channel is closed and current flow is drastically decreased, making it ideal for linear applications.
The AUIRFB4410 is particularly useful in switching applications due to its capability of handling high voltages and currents. It is capable of sustaining 30V VGS and 350A current while operating at temperatures up to 175C. The rated Gate-Source Voltage (VGS) and Drain-Source On Resistance (RDSon) are 13V and 5 mΩ, respectively. It features a fast switching speed, making it ideal for high-speed switching applications such as computer peripherals, automobiles, motors, and other equipment.
In addition, the AUIRFB4410 is also suitable for linear applications. It has a low input capacitance of 0.0025pF and a low output capacitance of 0.0016pF. This makes it suitable for high quality audio amplifiers, voltage regulators and signal isolators. It has low drain to source leakage current and low gate charge, which make it suitable for low power consumption and low noise applications. It also features a high breakdown voltage of 500V, making it ideal for high power applications.
The AUIRFB4410 is an extremely versatile transistor, capable of being used in a wide range of applications. It is suitable for both switching and linear applications, offering excellent performance and reliability. Due to its low Gate-Source Voltage (VGS) and Drain-Source On Resistance (RDSon), it can be used for high power/current applications as well as low-power/current applications. It is extremely fast and reliable, making it the perfect choice for any application that requires fast switching or linear performance.
The specific data is subject to PDF, and the above content is for reference
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