AUIRFBA1405

The AUIRFBA1405 is a single field-effect transistor (FET) device specifically designed for low voltage applications. It utilizes an advanced silicon-on-insulator (SOI) technology for a low operating power level, low input and output capacitance, and high immunity to latch-up behavior.

The AUIRFBA1405 has two main components: a main FET structure and its associated small-signal transistors. The power FET has a low drain-source resistance which makes it suitable for high current applications. The small-signal transistors are responsible for controlling the power FET by providing the necessary on/off logic signals.

Compact size, low overall operating power, low parasitic capacitance and low power dissipation make the AUIRFBA1405 an ideal choice for various low voltage and battery powered applications. Additionally, the device\'s high immunity to latch-up behavior and its wide range of operating voltages allows the device to be used in a variety of mobile, multimedia and automotive systems.

The main FET structure of the AUIRFBA1405 has a drain-source voltage range of up to 16V and up to 20V. At the same time, it has a maximum gate-source voltage of up to 12V. The device is also capable of withstanding continuous drain-source voltages of up to 18V and maximum transient voltages of up to 20V.

The device also features a low on-resistance of only 12 mΩ and a fast turn-on/off time of 15ns, allowing for minimal power consumption and enhanced reliability. The low gate charge requirements of the device provide increased versatility, enabling the possibility of external gating circuitry.

The AUIRFBA1405’s main FET structure has been designed using an advanced SOI process and is designed to minimize the device’s input and output capacitances. The small-signal transistors have also been designed with a low input capacitance and a low collector-emitter saturation voltage to minimize power consumption and reduce heat-related losses.

The AUIRFBA1405 is a versatile device that can be used in a variety of low voltage applications. It has been designed to provide a low operating power level, low parasitic capacitance, and high immunity to latch-up behavior. It also features a low on-resistance, fast turn-on/off time, and wide range of operating voltages. The device is an ideal choice for various mobile, multimedia, and automotive systems.