Allicdata Part #: | AUIRFL014N-ND |
Manufacturer Part#: |
AUIRFL014N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 1.5A SOT-223 |
More Detail: | N-Channel 55V 1.5A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | AUIRFL014N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AUIRFL014N is a type of single N-Channel Power MOSFET. This field effect transistor is widely used in the popularly available analog and digital circuit designs. It is quite popular in signal processing and power amplification applications. The maximum drain current for this device is rated at 1.4 Amp and it is capable of providing a peak drain supply voltage of 30V. The device also has a thermal resistance rating of 1.5°C/W per Junction to Ambient.
The AUIRFL014N utilizes the MOSFET process to enable its operation. It consists of four layers of silicon dioxide (SiO2), also known as gate dielectric, which is sandwiched between two layers of n-type substrate and two layers of p-type substrate. The layers of substrate act as a channel for the current that is generated when the gate is triggered by an electrical signal. As the gate voltage increases, more current will flow through the channel, resulting in a larger amplification factor.
In typical applications, the ability of the AUIRFL014N to amplify low level electrical signals and produce high power supplies is often used in signal processing and switching applications. For example, when connected to an audio signal source, the MOSFET can act as a gain control. By adjusting the level of the gate voltage, the user can control the volume of the signal on the output. This feature makes the MOSFET the perfect choice for audio applications, including sound amplifiers and digital-to-analog converters.
Another example of the AUIRFL014N’s applicability is in power amplification applications. The MOSFET can be used to produce high power supplies with high power efficiency and low noise. In addition, the device is often used in switching circuits, where its low on-state loss enables efficient power transfer. In an example of a switching circuit, the MOSFET can be used to turn on and off vehicle headlights. By connecting the MOSFET to its control circuit, the user can control the lights on and off by turning the MOSFET’s gate voltage on and off.
The AUIRFL014N’s low on-state loss and high power efficiency make it a popular choice for amplifying digital logic circuits as well. By using the MOSFET to amplify logic signals, the user can attain a very low power dissipation level and higher power densities due to its high current capability. The MOSFET can also be used in digital-to-analog converters and digital modulation converters, enabling the user to obtain the required analog wave shapes from digital signals.
Overall, the AUIRFL014N is a highly versatile transistor that has a number of uses in the world of analog and digital circuit design. From audio amplifiers to power supplies, the MOSFET is capable of handling a range of electrical signals with ease. As technology advances, the AUIRFL014N is becoming increasingly popular due to its low cost and ease of use.
The specific data is subject to PDF, and the above content is for reference
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