AUIRFL024NTR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUIRFL024NTR is a two-terminal field effect transistor (FET) device, that provides very low on resistance. Manufactured by International Rectifier, the AUIRFL024NTR is a single-gate, N-type MOSFET that features enhanced high temperature performance, and low RDS(on). This device is ideal for most power management applications.

Applications:
The AUIRFL024NTR can be applied in a variety of power management applications, including partial bridge drivers and DC-DC converters. It is also suitable for end-user applications that require very low RDS(on) and low power dissipation.

Features:
The AUIRFL024NTR is an N-type FET with an on-resistance of 2.45mohm @10V, a current handling capacity of 24A, and a total gate charge of 15nC. It has been designed in a 0.75mm x 0.75mm PowerTrench MOSFET design from International Rectifier, making it suitable for high-density applications. Additionally, the device features fast switching speed and integrated body diode.

Working Principle:
The AUIRFL024NTR is an insulated-gate FET (IGFET). This device works on the principle that a voltage applied to the insulated gate terminal can influence its conductivity. By controlling the conductivity of the FET, the user can control the current that flows through its channel. This is done by applying a voltage between the source and drain terminals, which then overlaps an electric field region between the source and drain, known as the “channel”. As the gate voltage is varied, the thickness of this electric field region changes, thereby affecting the flow of current.

The device has an integrated body diode which works in conjunction with the FET. When a positive voltage is applied to the drain and a negative voltage to the source, the diode between the source and drain will conduct current, allowing current to flow between the two terminals. The body diode will then turn off when the drain voltage is greater than the source voltage, allowing the FET to take over and control the current flow.

To summarize, the AUIRFL024NTR is an N-type FET that can be used in a wide range of power management applications. It is designed in a 0.75mm x 0.75mm PowerTrench MOSFET design, and features fast switching speed and an integrated body diode. It works on the principle that a voltage applied to the insulated gate terminal can influence its conductivity, and when combined with the integrated body diode, allows the user to fully control the current that flows through its channel.

The specific data is subject to PDF, and the above content is for reference