AUIRFN7107TR Allicdata Electronics
Allicdata Part #:

AUIRFN7107TR-ND

Manufacturer Part#:

AUIRFN7107TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 75A 8PQFN
More Detail: N-Channel 75V 14A (Ta), 75A (Tc) 4.4W (Ta), 125W (...
DataSheet: AUIRFN7107TR datasheetAUIRFN7107TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 100µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3001pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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AUIRFN7107TR is a type of transistor, specifically a single, enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are used in many electronic devices and circuits, including computers, communication systems, and motor control systems. They are used to control the flow of current, acting as a switch or amplifier. The AUIRFN7107TR is a type of N-channel, enhancement mode MOSFET that is also suitable for gate drive applications.

The AUIRFN7107TR\'s application field is mainly in switch and low-noise amplifier circuits. It is typically used as a switch in power control applications and motor control systems, as well as in low-noise amplifier circuits and in mobile communications, for example for the control of power amplifiers.

The AUIRFN7107TR operates on a principle of applying an electric field to a gate in order to control current flow through a channel between the source and drain of the MOSFET. By applying a voltage to the gate, an electric field is created that can control current flow. This is accomplished by creating an insulating layer between the gate and the channel, preventing current flow. When the voltage applied to the gate increases, the electric field increases and current in the channel can flow. This allows the AUIRFN7107TR to act as a switch or amplifier, depending on the specific application.

The AUIRFN7107TR also incorporates some additional features that make it suitable for gate drive applications. It has a low on-state resistance and low gate charge, which allows it to switch quickly and efficiently with minimal power loss. It also has an over-temperature protection feature, which prevents it from overheating and damaging the circuit.

To sum up, the AUIRFN7107TR is a type of single, enhancement mode MOSFET transistor that is suitable for switch and low-noise amplifier circuits. It works on the principle of applying an electric field to a gate in order to control current flow. It is designed with additional features that make it suitable for gate drive applications, including low on-state resistance and low gate charge, as well as over-temperature protection.

The specific data is subject to PDF, and the above content is for reference

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