AUIRFN7110TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUIRFN7110TR MOSFET is a high performance insulated gate field-effect transistor (FET) that offers superior switching performance for dc-dc converter applications. This device is a dual-gate MOSFET with an integrated protection diode. It is a power dissipation switch with low on-state resistance, making it suitable for high current applications such as reverse polarity protection and power factor correction.

The AUIRFN7110TR MOSFET has a wide variety of operating conditions and applications. It can be used in off-line converter applications to provide low-loss switching, high voltage dv/dt threshold, and high-speed switching due to its low on-resistance. It is also suitable for use in acceleration or deceleration control circuits, as well as in power management applications. The integrated protection diode eliminates the need for an external diode, reducing system cost and simplifying board layout.

The AUIRFN7110TR MOSFET is a single channel, dual-gate device consisting of an N-channel insulated gate field effect transistor (IGFET) incorporating a series pass element, and a protection diode. It is fabricated using Insulated Gate Bipolar Transistor (IGBT) technology, which is a combination of bipolar transistor and FET. The integrated protection diode provides reverse polarity protection for the switch. The device is capable of blocking voltages up to 600V and carries a current of up to 10A. The device has excellent switching speed and high system efficiency due to its low on-state resistance and low capacitance. The device is rated at an operating temperature of -55°C to +150°C.

The working principle of the AUIRFN7110TR MOSFET is based on the fact that the current through an insulated gate field-effect transistor (IGFET) is controlled by the voltage applied to its gate electrode. When a lower voltage is applied to the gate terminal of the FET, the depletion region surrounding the gatewidens, allowing current to flow from the source to the drain when a higher voltage is applied. Conversely, when a higher voltage is applied to the gate terminal, the depletion region shrinks and the current flow from the source to the drain is cut off. The transistor is switched on and off depending on the gate voltage. The drain-source voltage (Vds) and the drain current are monitored to indicate the performance of the MOSFET.

The AUIRFN7110TR MOSFET is a high performance device that offers superior switching performance for dc-dc converter applications. The device has an integrated protection diode, low on-state resistance, and excellent switching performance, making it suitable for high current applications such as reverse polarity protection and power factor correction. It is also suitable for use in acceleration and deceleration control circuits, and power management applications. The AUIRFN7110TR MOSFET is a great choice for any application that requires fast and accurate switching.

The specific data is subject to PDF, and the above content is for reference