Allicdata Part #: | AUIRFN8401TR-ND |
Manufacturer Part#: |
AUIRFN8401TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 84A 8PQFN |
More Detail: | N-Channel 40V 84A (Tc) 4.2W (Ta), 63W (Tc) Surface... |
DataSheet: | AUIRFN8401TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 50µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 4.2W (Ta), 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The AUIRFN8401TR is a N-channel enhancement mode MOSFET commonly used in power switching applications, such as motor speed control or lighting control. It is particularly useful in these types of applications because it has an extremely low on-resistance and a very high maximum breakdown voltage.
Application Field of AUIRFN8401TR
The AUIRFN8401TR is designed for applications requiring high power handling capabilities with low gate drive requirements. Its low on-resistance makes it suitable for efficient power switching, while its high maximum breakdown voltage ensures it can handle large voltage drops. Given its N-channel configuration, it is also ideal for use in switched-mode power supplies, as it can be controlled directly by a digital logic signal. In addition, its extremely low reverse transfer capacitance and Miller capacitance make this device an excellent choice for high frequency switching applications, such as those found in radio frequency (RF) circuits.
Working Principle of AUIRFN8401TR
The AUIRFN8401TR is an N-channel enhancement mode MOSFET, which operates by altering the conductive channel between its source and drain terminals. When the gate terminal is held at a voltage greater than the source voltage (Vgs ~ 0 V) the device is turned “on”, allowing current to flow between the source and the drain. When the gate voltage is brought below the threshold voltage (Vgs ~ Vt) the device is turned “off”, preventing current from flowing between the source and the drain. This process occurs extremely quickly, making the device an ideal choice for high frequency power switching applications.
The AUIRFN8401TR features extremely low input capacitance, making it an excellent choice for power switching applications where maximum switching speed is required. The device also features low output capacitance, which allows for faster charge/discharge times when the device is subjected to large voltage swings. In addition, the device features a very low on-resistance, making it an excellent choice for power switching applications where power efficiency is paramount.
The AUIRFN8401TR is available in a variety of packages and voltage ratings, making it an extremely versatile power switching device. It also has an ESD rating of 1,500V, making it suitable for use in most consumer applications.
In conclusion, the AUIRFN8401TR is an excellent choice for power switching applications where efficiency, speed, and reliability are paramount. It is an extremely versatile and robust device that is capable of operating in harsh environments, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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