Allicdata Part #: | AUIRFP4409-ND |
Manufacturer Part#: |
AUIRFP4409 |
Price: | $ 3.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 300V 38A TO-247AC |
More Detail: | N-Channel 300V 38A (Tc) 341W (Tc) Through Hole TO-... |
DataSheet: | AUIRFP4409 Datasheet/PDF |
Quantity: | 1000 |
400 +: | $ 2.99657 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 341W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5168pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 69 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AUIRFP4409 is an N-channel power MOSFET with integrated Schottky diode that is produced by International Rectifier Corporation. It is a useful device for switching high loads with low on-state resistance, high speed and low gate threshold. In this article, we will analyze the application field and working principle of the AUIRFP4409.
This device is basically designed to be used in applications requiring high-side switching of high voltage and higher current. Its supply voltage range can be extended up to 600 volts and it can handle up to 6A of current. It is also capable of providing transient protection to its connected circuit. Owing to its low gate threshold voltage and low on-state resistance, it can operate at high switching frequencies to provide efficient power conversion.
The device has two main functional parts: the MOSFET section and the Schottky diode section. The MOSFET section has a temperature-compensated threshold and an operating region between 20V and 600V. On the other hand, the Schottky diode section provides protection to the device from voltage spikes. It acts like a clamp, absorbing the transient voltage spikes and dissipating the excess energy.
The operating principles of the AUIRFP4409 can be explained with two important terms – drain voltage and gate voltage. When the gate voltage is high (positive with respect to the source), the MOSFET is “on” and allows the current to flow through it freely. But when the gate voltage is low (negative with respect to the source), the MOSFET is “off” and blocks the flow of current.
The other important property of this device is its “body diode”. The body diode conducts the current when the voltage between drain and source is positive. This is possible due to the PN junction formed by the source and drain regions of the MOSFET. This feature is useful in short-circuit protection circuits and similar applications.
Apart from its use in power switching applications, the AUIRFP4409 can also be used as an amplifier. It can be used to amplify small signals because of its low input impedance. It is also useful for generating the switching signals necessary for the operation of switches by taking advantage of its low drive current.
The AUIRFP4409 is a versatile device that can be utilized in various applications. Its integrated Schottky diode provides protection against transient voltages and its low on-state resistance enables efficient power conversion. It is also useful as an amplifier due to its low input impedance. Thus, the AUIRFP4409 is a highly useful and efficient device in modern electronics.
The specific data is subject to PDF, and the above content is for reference
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