AUIRFR2307Z

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The AUIRFR2307Z is a single source, N-channel, field-effect transistor (FET) designed for use in numerous applications including power management, converters, and motor control. This versatile transistor is ideal for applications requiring high power efficiency, low noise, and enhanced transient performance. In this article, we will provide an overview of the AUIRFR2307Z including its typical applications and its working principle.

The AUIRFR2307Z is a high-performance single-gated FET commonly used in a wide range of applications such as switched-mode power supplies, power management, converters, and motor control. This FET can achieve a maximum drain-source on-state resistance (RDSon) of 45.6 mOhm and a low gate-source threshold voltage (VGS) of 3.8 V. It has a low gate-controlled capacitive load (CL) of 8.1 pF, making it suitable for use in high-speed switching applications. It also has a large breaking capacity of 36 A, making it well-suited for use in high-current applications.

The AUIRFR2307Z is suited for power management and motor control applications due to its low RDSon and low CL. Its small capacitive load ensures low switching losses and minimal noise in high-side circuits; thus, resulting in improved system performance. Additionally, the AUIRFR2307Z has integrated protection features, including ESD protection and over-current protection, making it reliable and safe in high-energy applications. Furthermore, it has a low thermal resistance, allowing adequate heat dissipation.

In addition to its numerous features, the AUIRFR2307Z uses a proprietary technology that increases its performance and reliability even further. This technology comprises of an innovative gate structure and an embedded resistor that provides an accurate and reliable control of the drain-to-source resistance. This advanced gate structure allows the AUIRFR230 to switch quickly, making it suitable for high-speed applications.

The working principle of the AUIRFR2307Z is relatively straightforward. When the gate of the FET is positively charged, a depletion region is formed in the channel region, which reduces the current flow. As the gate voltage is lowered, the depletion region reduces, and so the current flow increases. In a similar manner, the greater the magnitude of the gate voltage, the greater the resistance between the drain and source (i.e. RDSon).

In summary, the AUIRFR2307Z is a high-performance single-gated FET designed for use in numerous applications. It provides a maximum drain-source on-state resistance (RDSon) of 45.6 mOhm, a low gate-source threshold voltage (VGS) of 3.8 V, and a low gate-controlled capacitive load (CL) of 8.1 pF. Its innovative gate structure and low thermal resistance make it suitable for high-speed, high-current and high-energy applications. Finally, its working principle is based on the formation of a depletion region in the channel region when the gate of the FET is positively charged, resulting in a low RDSon.

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