Allicdata Part #: | AUIRFR2405-ND |
Manufacturer Part#: |
AUIRFR2405 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 30A DPAK |
More Detail: | N-Channel 55V 30A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | AUIRFR2405 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2430pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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AUIRFR2405 is a high current power field effect transistor (FET) designed for applications that require high voltage and current. It is designed to produce an output current of 24A, with a maximum voltage of 100V. This device is a low-cost, easy to use, and highly efficient power MOSFET.
The AUIRFR2405 is a single Gate FET (SFET) device. It is a three-terminal device with a gate, source and drain. The gate is used to control the drain-source current by applying a gate-to-source voltage. The gate is typically a low-power device and should be driven with a low-voltage driver. The source and drain are the output terminals and are used to provide the power dissipation or output.
The maximum drain-source breakdown voltage of the AUIRFR2405 is 100V and the on-state drain current (ID) is 24A. The devices are optimized for switching operations with a falling gate-drain voltage. The AUIRFR2405 also has an adjustable gate-source leakage current (leakage) of 1.5mA.
The AUIRFR2405 is designed for use in applications such as home appliances, motor control, lighting, and power supplies. It offers higher current capability, lower on-resistance, and improved efficiency compared to other types of FETs. It is an excellent choice for applications where precision, low power consumption, and maximum efficiency are required.
The AUIRFR2405 operates according to the principle of operation of most power MOSFETs. The effective output resistance decreases when the drain-source voltage is swept across the gate-source threshold voltage. The maximum achievable output current is limited by the reverse leakage current between the gate and the drain. As the gate voltage is increased, the drain current increases. The maximum achievable output current is limited by the FET\'s maximum drain-source breakdown voltage.
The AUIRFR2405 is a reliable and efficient high power device that can handle a wide range of applications. It has a high input impedance and negligible body effects, making it ideal for applications that require precise control over current and voltage. The high voltage and current capacity of the device makes it a great choice for applications that require a high level of power efficiency. The AUIRFR2405 is available in a variety of packages, making it a flexible solution for many different applications.
Overall, AUIRFR2405 is a great choice for power MOSFET applications. Its high current capabilities and improved efficiency make it an ideal device for switching applications that require precision and high power efficiency. The device\'s adjustable gate-source leakage current makes it useful in applications that require precise current control. This device is an excellent choice for a wide range of applications, from appliances to motor control to lighting and power supplies.
The AUIRFR2405 is a cost-effective, easy to use, and highly efficient device for many power FET applications. Its adjustable gate-source leakage current, high current capabilities, and high efficiency make it an ideal choice for applications that require precision, low power consumption, and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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