Allicdata Part #: | AUIRFR2407-ND |
Manufacturer Part#: |
AUIRFR2407 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 42A DPAK |
More Detail: | N-Channel 75V 42A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | AUIRFR2407 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFR2407 is an N-channel, 50V, 0.4Ω, standard level MOSFET, which derives its outstanding performance from advanced process design and dynamic characterization techniques. It is ideal for general purpose switching and low-side switch applications because it features low on-resistance and fast switching capabilities. This power MOSFET is suitable for a wide operating temperature range of -40°C to +170°C and has a typical gate charge of 6.0nC.
The AUIRFR2407 is an ideal choice for power electronics applications such as high-efficiency power switches, DC-DC converters, variable-speed motor control, and battery management systems. This MOSFET\'s fast switching performance also brings advantages to portable systems, and low on-resistance decreases power consumption in high current applications. All these characteristics make the AUIRFR2407 an advantageous choice for designs requiring low current switching and low heat dissipation.
The working principle of the AUIRFR2407 is based on the transfer of electrons and holes. This MOSFET is constructed with a semiconductor channel between the source and the drain. The resistance between the source and the drain is dependent on the voltage applied to the gate, which then controls the width of the channel. When the gate voltage is high, the channel is wide and the resistance is low. When the gate voltage is low, the channel is narrow and the resistance is high. When a voltage is applied to the gate, an electric field sets up in the channel, which attracts the electrons and holes from the source and the drain respectively. This process creates a current flow between the source and the drain and the resistance between them is determined by the voltage applied to the gate.
The high performance of the AUIRFR2407 is attributed to its capability to handle very high current levels that result in high power dissipation. Furthermore, the high-frequency response and switching times of this MOSFET are enhanced thanks to its advanced process design. Also, its high voltage threshold creates higher voltage gains, which makes this device very attractive in applications where fast switching speeds and low power dissipation are needed.
In conclusion, the AUIRFR2407 is an excellent choice for applications that require fast switching speeds, low power dissipation, and high current ratings. This power MOSFET has a wide operating temperature range and its gate charge of 6.0nC ensures high frequency response and low switching times. The working principle of this device is based on the transfer of electrons and holes, and its low on-resistance is what provides it with high power dissipation capabilities. All these advantages make the AUIRFR2407 an ideal choice for power electronics applications such as high-efficiency power switches, DC-DC converters, variable-speed motor control, and battery management systems.
The specific data is subject to PDF, and the above content is for reference
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