AUIRFR2607Z Allicdata Electronics
Allicdata Part #:

AUIRFR2607Z-ND

Manufacturer Part#:

AUIRFR2607Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 42A DPAK
More Detail: N-Channel 75V 42A (Tc) 110W (Tc) Surface Mount D-P...
DataSheet: AUIRFR2607Z datasheetAUIRFR2607Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 50µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The AUIRFR2607Z is a N-channel MOSFET from International Rectifier, designed for high performance switching applications. This low-profile transistor is ideal for use in automotive, industrial, and consumer applications. This MOSFET is particularly suitable for applications such as high-current switching, voltage regulation, and DC/DC conversion for portable electronics and automotive systems. The device has low on-resistance and high-temperature capabilities, making it suitable for use in a wide range of applications.

The AUIRFR2607Z is a type of discrete transistor known as a MOSFET (metal–oxide–semiconductor field-effect transistor). This type of transistor uses a gate electrode which controls the flow of current between the source and gate. The gate attaches to a highly resistive material (the gate electrode). When a small current is applied to the gate electrode, the resistance between the source and gate changes and current can pass through. This is known as the switch-ON effect.

The AUIRFR2607Z N-channel MOSFET has an on-resistance of 2.6Ω and a maximum voltage of 12V. It is capable of delivering up to 41A of current. It has a maximum power dissipation of 15.9W and a forward transconductance (d(I d )/d(V g )) of 610mΩ. The device also has a Gate Threshold Voltage (V TH ) of 0.7V and an Maximum Drain-Source On-State voltage (V DS(on) ) of 2.5V.

The AUIRFR2607Z is well suited for DC-DC conversion and high-current switching applications. The device is designed to switch rapidly and efficiently on-and-off in order to regulate current flow. With its low on-resistance and high-temperature capability, the AUIRFR2607Z is able to handle a range of voltages and currents for a wide variety of applications. The device is also designed to be high-reliable in order to ensure long life-time and consistent performance.

The AUIRFR2607Z is an all-around transistor, ideal for use in automotive, industrial, and consumer applications. It is particularly suitable for use in high-current switching, voltage regulation, and DC/DC conversion applications. With its low on-resistance and high-temperature capabilities, the AUIRFR2607Z is a highly reliable, fast switching device.

The specific data is subject to PDF, and the above content is for reference

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