Allicdata Part #: | AUIRFR3504Z-ND |
Manufacturer Part#: |
AUIRFR3504Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 42A DPAK |
More Detail: | N-Channel 40V 42A (Tc) 90W (Tc) Surface Mount D-Pa... |
DataSheet: | AUIRFR3504Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFR3504Z is a high voltage, high current, N-channel MOSFET that has applications in a variety of industries due to its broad range of features. It is widely used in applications that require a high current handling rating, such as motors and various industrial equipment. This MOSFET is also used in different audio applications, as its power rating is ideally suited for holding and switching audio signals. Therefore, AUIRFR3504Z is well suited for many applications.
The AUIRFR3504Z is based on a common gate MOSFET structure. A gate is the control element of the device, and acts like a switch that either allows current to flow or prevents it from doing so. Inside the MOSFET, there is a N-type channel that is surrounded by a positively charged gate. This forms a depletion region which prevents current from flowing. When a voltage is applied to the gate, the depletion region is reduced which allows electrons to flow and current to be conducted.
The AUIRFR3504z has an RDSon of 8.3mΩ which is lower than its predecessor, the AUIRFR3503z, making it more efficient at power distribution. It has a maximum voltage rating of 500V and a continuous drain current of 22A. It is also capable of handling high pulse loads and can provide up to 40A for pulses of 5ms and over. This makes it suitable for applications that involve large peak loads, such as motors or switching power supplies. In addition, the device can handle a maximum junction temperature of 175℃.
The AUIRFR3504z also features a low gate threshold voltage of 1.8V and a low gate capacitance of 20nF. This allows it to switch quickly and accurately, making it suitable for applications that require quick and accurate switching. The low gate capacitance also means that less energy is required to switch on the device, increasing the device’s overall efficiency.
In addition to its high performance, the AUIRFR3504z also has a low thermal resistance, making it ideal for applications that require efficient heat dissipation. This device also has a low package profile, making it easy to place within small spaces, such as inside a computer case. The device is offered in both surface mount and through-hole packages, allowing for easy implementation into any system.
Overall, the AUIRFR3504z is an excellent MOSFET for applications that requires fast and accurate switching, power distribution, and efficient heat dissipation. Its broad range of features and low package profile make it suitable for a variety of applications, including motor control, audio applications, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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