
Allicdata Part #: | AUIRFR3806TRL-ND |
Manufacturer Part#: |
AUIRFR3806TRL |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 43A DPAK |
More Detail: | N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D-PA... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.48646 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 15.8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRFR3806TRL is a advanced power MOSFET from Infineon Technologies. It is used a power switch in many electronic applications and is ideal for motor control, load switching and DC-DC conversion. The device has a maximum drain source voltage of 30V, a continuous drain current of 14A, a maximum pulse current of 28A and an avalanche energy rating of up to 54mJ
Application Field of AUIRFR3806TRL
The AUIRFR3806TRL offer a series of advantages for switching applications, including low on-resistance, high output current capability and fast switching speed. Its wide range of specifications makes it suitable for a broad range of applications such as motor control, load switching and DC-DC conversion. In addition, its high maximum-drain current and maximum avalanche energy rating make it an excellent choice for applications that require efficient power delivery.
The AUIRFR3806TRL can be used in a wide range of applications, including lighting systems, power converters, power supplies, automotive electronics, lighting systems, UPS systems, solar and wind applications, gaming systems and many other applications.
Working Principle of AUIRFR3806TRL
The AUIRFR3806TRL is an advanced power MOSFET from Infineon Technologies. It is based on the company’s advanced trench technology to ensure excellent on-resistance and current carrying capability. The device is built to provide excellent efficiency and energy savings in a variety of applications.
The AUIRFR3806TRL comprises of 14A of continuous drain current, 30V of maximum drain source voltage, 28A of maximum pulse current rating and a maximum avalanche energy rating of up to 54mJ. The device also offers a fast switching speed to ensure a low total power dissipation in a given circuit.
The device is based on the principle of the enhancement mode MOSFET structure. When a voltage is applied to the gate, a channel is formed between the source and drain. This allows current to flow from the source to the drain, and vice versa.
The AUIRFR3806TRL also features a low on-resistance. This allows the device to deliver efficient power conversion and switching, with less power dissipation. The device also features a high-current carrying capability, and a low gate threshold voltage, allowing it to switch quickly and easily.
The device is quite easy to use and does not require an external gate resistor for switching. It is also capable of handling up to 28A of pulsed current, and a maximum avalanche energy rating of up to 54mJ. Its parameters are also quite specific, meaning that it can easily be tailored to the requirements of a particular application.
In conclusion, the AUIRFR3806TRL is an advanced power MOSFET from Infineon Technologies that is well suited for a variety of applications. It offers a wide range of specifications, including 14A of continuous drain current, 30V of maximum drain source voltage, 28A of maximum pulsed current rating, and a high maximum avalanche energy rating. It is easy to use, and its fast switching speed ensures a low total power dissipation. It also features a low on-resistance, high-current carrying capability, and a low gate threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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