Allicdata Part #: | AUIRFR4105-ND |
Manufacturer Part#: |
AUIRFR4105 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 20A DPAK |
More Detail: | N-Channel 55V 20A (Tc) 68W (Tc) Surface Mount D-Pa... |
DataSheet: | AUIRFR4105 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
Description
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Introduction: The AUIRFR4105 is a very popular single-transistor power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is designed to be used in applications where high speed switching and low voltage dropout is desired. The AUIRFR4105 has a breakdown voltage of 30V, a current carrying capacity of 2.5A and a peak pulse current of 40A.Application Field of AUIRFR4105: The AUIRFR4105 is a highly popular device and is used in a variety of applications. It is commonly used in automotive, consumer, and industrial applications, including driving loads such as relays, motors, and solenoids. This makes the device ideal for applications such as automotive powertrain control, consumer appliance control, industrial lighting, and driver control.The device’s low on-resistance (Rds(on)) allows for a very low voltage dropout, meaning that for a given supply voltage the device will only turn on when the load current is relatively low. This is extremely useful for applications that need to perform at low voltages, such as automotive powertrain control.The device also features a high switching speed, allowing for fast transients that can be utilized for a variety of applications. This includes automotive powertrain control, where fast transients enable the driver to change speed quickly. This can also be used in the control of consumer and industrial products, where fast transients enable faster response times to user input. Lastly, the device offers a very low on-resistance (Rds(on)) when compared to other transistors, making it ideal for applications where power loss must be minimized. This is especially important for automotive powertrain control, where minimizing power loss is essential as it can be the difference between a vehicle reaching its desired speed and one that cannot. Working Principle of AUIRFR4105: The AUIRFR4105 is a single-transistor MOSFET and works in the same way as all other MOSFETs. The device consists of three electrodes which include the source, gate, and drain. When a voltage is applied to the gate of the device, it creates an electric field that attracts electrons from the source to the drain. This forms an “inversion layer” that enables current to flow between the source and the drain. The amount of current that can pass through the device is determined by the magnitude of the voltage applied to the gate. As the voltage increases, more current can pass through, allowing for more efficient power transfer. In addition, the device\'s low on-resistance (Rds(on)) means that when the device is turned on, there is little to no voltage drop across the device, allowing for more efficient power transfer from the source to the load.Conclusion: The AUIRFR4105 is a popular power MOSFET that is used in a variety of applications including automotive, consumer, and industrial applications. This is due to its low on-resistance (Rds(on)), high switching speed, and low voltage dropout that enable the device to be used in applications where efficiency and performance are paramount. The device works by creating an “inversion layer” when a voltage is applied to the gate, thus allowing current to flow between the source and the drain.The specific data is subject to PDF, and the above content is for reference
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