Allicdata Part #: | AUIRFR4615TRL-ND |
Manufacturer Part#: |
AUIRFR4615TRL |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 33A DPAK |
More Detail: | N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D-... |
DataSheet: | AUIRFR4615TRL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.70480 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 144W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1750pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AUIRFR4615TRL Application Field and Working Principle
The AUIRFR4615TRL is a power MOSFET that has unique features, allowing it to be used in a variety of applications. It utilizes a logic-level gate structure, as opposed to a traditional gate structure, which allows for low voltage logic level activation. This, in turn, enables it to be used in low voltage systems, which would otherwise require a higher level of power than many other MOSFET devices could provide. Additionally, its superior switching performance, low capacitive parasitics and low power dissipation, gives it a great advantage in certain applications, such as those found in automotive and industrial markets.
The AUIRFR4615TRL utilizes an N-Channel MOSFET structure, which allows for a higher level of performance than many other MOSFET devices. This N-Channel MOSFET structure is represented by a depletion-mode JFET (or junction field-effect transistor), which is a basic MOSFET device with a p-type gate. The device works by applying a voltage to the gate, which creates an electric field and alters the conductivity of the channel between the gate and the source. This can be used to alter the flow of current between the source and drain. The AUIRFR4615TRL utilizes a logic-level gate structure, which allows for low voltage operation, as opposed to a traditional gate which requires a higher Vgs (gate-to-source voltage) for activation. This allows for a lower operating voltage, as well as greater efficiency.
Due to its unique features and superior performance, the AUIRFR4615TRL is ideal for a variety of applications. It can be used in automotive applications, such as DC-DC converters, engine control units, door locks, and many others. It can also be used in industrial applications, such as motor control systems, high-power switches, AC-DC adapters, as well as many other applications that require reliable power switching and low power dissipation. Additionally, the AUIRFR4615TRL can also be used in consumer electronics, such as mobile phones, laptop computers, and tablets.
The AUIRFR4615TRL offers a number of advantages over other MOSFET devices. It has a high switching speed, a low Rds(on) and gate charge, and a small on-resistance. Additionally, it has low gate capacitance and low power dissipation. All of these features make it an ideal device for a variety of applications, as it is able to provide both high performance and low power consumption.
The AUIRFR4615TRL is a unique power MOSFET device that has superior performance in many applications. It offers a number of advantages over other MOSFET devices, such as a low Rds(on), low gate capacitance, and low power dissipation. Additionally, its logic-level gate structure allows for low voltage operation, thus making it ideal for applications found in the automotive and industrial markets. The AUIRFR4615TRL can be used in a variety of applications, ranging from DC-DC converters to motor control systems, and is well-suited for any application that requires reliable power switching and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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