Allicdata Part #: | AUIRFR4620-ND |
Manufacturer Part#: |
AUIRFR4620 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 24A DPAK |
More Detail: | N-Channel 200V 24A (Tc) 144W (Tc) Surface Mount D-... |
DataSheet: | AUIRFR4620 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 144W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRFR4620 is a dual N-channel logic level MOSFET designed for use in power applications. This device is designed for saturated operations only, and as such has a drain-source voltage (Vds) rating of 60V and a total gate-source voltage (Vgs) rating of 8V. It is manufactured using the same process technology as most other MOSFETs, with high-speed FET technology combined with a high-speed Dual N-channel MOSFET structure.
The AUIRFR4620 is suited for applications such as motor drives, power supplies, DC-DC converters, power amplifiers, and switching regulators. Its Features such as built-in protection for under-voltage lockout (UVLO) and soft-start make it ideal for these applications. Additionally, the device provides high drain-source breakdown voltage (BVDSS) for greater efficiency, as well as a low operating temperature range for better reliability.
The AUIRFR4620 is an ideal MOSFET for applications where reliability and performance are paramount. Its small footprint and low on-resistance allow it to be used in applications where space is a premium, and its small gate charge means that it can be switched quickly and efficiently.
The AUIRFR4620\'s working principle is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) structure which utilizes a gate-controlled structure to regulate the device\'s output. The MOSFET consists of an insulated gate, an n-type semiconductor region, and a p-type semiconductor region. When the gate-voltage between the gate and the source is increased, the source-drain current increases. By controlling the gate-voltage, the gate can control the source-drain current, which in turn can be used to control the output.
The AUIRFR4620 can be used in a wide range of applications, from low-power motor drives to high-power switching applications. Its low on-resistance, fast switching speed, and low temperature rating make it an ideal choice for power applications. Additionally, the device\'s built-in protection for under-voltage lockout (UVLO) and soft-start makes it extremely useful for applications where power-up coverage and protection are important. As a result, the AUIRFR4620 is an ideal device for a wide range of power applications.
The specific data is subject to PDF, and the above content is for reference
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